[B-1-3]Si:C-S/D Engineering using Cascade C7Hx Implantation Followed by Rapid Solid-Phase Epitaxy and Laser Annealing for nMOSFET with Highly-Strained and Low-Resistive S/D
T. Yamaguchi1, Y. Kawasaki1, T. Yamashita1, Y. Nishida1, M. Mizuo2, K. Maekawa1, M. Fujisawa1(1.Renesas Electronics Corp., 2.Renesas Semiconductor Engineering Corp. (Japan))
