2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

Sep 24 - Sep 27, 2013Hilton Fukuoka Sea Hawk, Fukuoka, Japan
International Conference on Solid State Devices and Materials
2013 International Conference on Solid State Devices and Materials

2013 International Conference on Solid State Devices and Materials

Sep 24 - Sep 27, 2013Hilton Fukuoka Sea Hawk, Fukuoka, Japan

[B-4-3]Modified Deal-Grove model for the thermal oxidation of Ge and Al2O3 capped Ge

S.K. Wang1, X.L. Wang1, L. Han1,2, W. Zhao1, B. Sun1, W.W. Wang.1, C. Zhao1, H.G. Liu1(1.Inst. of Microelectronics, Chinese Academy of Sciences, 2.Southeast University (China))
https://doi.org/10.7567/SSDM.2013.B-4-3