2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
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International Conference on Solid State Devices and Materials
2014 International Conference on Solid State Devices and Materials

2014 International Conference on Solid State Devices and Materials

Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan

[A-2-5L]Modeling of Read Disturbance Mechanism due to Carrier Trapping in Sub-20nm NAND Flash Memory

D. Kang1, K. Lee1, S. Kwon2, S. Kim2, Y. Hwang2, H. Shin1(1.Seoul Natioanl Univ., 2.Samsung Electronics Corp., Ltd. (Korea))
https://doi.org/10.7567/SSDM.2014.A-2-5L
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