[A-1-1]Scaling of Resistive Switching Devices
D. Ielmini1(1.Politecnico di Milano and IU.NET (Italy))
2014 International Conference on Solid State Devices and Materials
Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
You can search for presentations in this event.
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2014 International Conference on Solid State Devices and Materials
Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
You can search for presentations in this event.
SearchSearch Results(540)
[A-1-2]Non-negligible Metal Ions Diffusion in Amorphous Oxygen-Deficient Metal-Oxide Based Resistive Switches: A First Principle Study
B. Xiao1, S. Watanabe1(1.Univ. of Tokyo (Japan))
[A-1-3]Interface Engineering in Homogeneous Barrier Modulation RRAM for 3D Vertical Memory Applications
W.L. Lai1, C.T. Chou1, C.W. Hsu1, J.C. Liu1, B. Hudec1, C.H. Ho2, W.Y. Jang2, C.H. Lin2, T.H. Hou1(1.NCTU, 2.Winbond Electronics Corp. (Taiwan))
[A-1-4]Novel Non-Precious Metal Electrode Material for ReRAM Device
N. Fukuda1, Y. Nishioka1, K. Suu1(1.ULVAC, Inc. (Japan))
[A-2-1]Growth and Shrinkage of Conductive Filament in Cu/MoOx ReRAMs Observed by Means of In-Situ TEM
M. Arita1, Y. Ohno1, M. Kudo1, Y. Takahashi1(1.Hokkaido Univ. (Japan))
[A-2-2]Dual-Mode Bipolar Resistance Switching in the HfO2 RRAM Device
H.Z. Zhang1, K.S. Yew1, D.S. Ang1, C.J. Gu1, X.P. Wang2(1.Nanyang Tech. Univ., 2.Inst. of Microelectronics, A*STAR (Singapore))
[A-2-3]Electro-thermal driven nano-scale IMT characteristics of SmNiO3 for selector application of cross-point memory array
S.H. Misha1, N. Tamanna1, A. Prakash1, J. Song1, D. Lee1, E. Cha1, H. Hwang1(1.Pohang Univ. of Sci. and Tech. (Korea))
[A-2-4]Self-Rectifying Ta/TaOx/TiO2/Ti Cell for High-Density Flexible RRAM
C.T. Chou1, C.W. Hsu1, C.C. Chang1, T.H. Hou1(1.NCTU (Taiwan))
[A-2-5L]Modeling of Read Disturbance Mechanism due to Carrier Trapping in Sub-20nm NAND Flash Memory
D. Kang1, K. Lee1, S. Kwon2, S. Kim2, Y. Hwang2, H. Shin1(1.Seoul Natioanl Univ., 2.Samsung Electronics Corp., Ltd. (Korea))
[A-3-1]Current Status of Cation-Based Resistive Memory
M.N. Kozicki1, H.J. Barnaby1(1.Arizona State Univ. (USA))
[A-3-2]Mechanism of OFF-State Lifetime Improvement in Complementary Atom Switch
N. Banno1, M. Tada1, T. Sakamoto1, M. Miyamura1, K. Okamoto1, N. Iguchi1, T. Nohisa1, H. Hada1(1.LEAP (Japan))
[A-3-3]DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics
T. Onuki1, K. Kato1, M. Nomura1, Y. Yakubo1, S. Nagatsuka1, T. Matsuzaki1, S. Hondo1, Y. Hata1, Y. Okazaki1, M. Nagai1, T. Atsumi1, M. Sakakura1, T. Okuda1, Y. Yamamoto1, S. Yamazaki1(1.Semiconductor Energy Lab. Corp., Ltd. (Japan))
[A-3-4]2T1C Gain Cell Memory with Improved Retention Characteristic By Dual Coupling Method for SOC application Using 45nm-logic compatible CMOS Process
C.J. Lee1, Y.K. Lee1, M.K. Park1, S.W. Kim1, D.H. Lee1(1.Samsung Electronics Corp. (Korea))
[A-4-1]108 Endurance Nonvolatile Memory Transistor with 100 nm Metal Gate
L.V. Hai1, M. Takahashi1, W. Zhang1, S. Sakai1(1.AIST (Japan))
[A-4-2]Effect of Oxygen Partial Pressure Under Heat Treatment on Ferroelectricity of (Hf0.5Zr0.5)O2 Thin Films
H. Funakubo1,2, T. Shimizu2, T. Yokouchi1, T. Oikawa1, T. Shiraishi1, T. Kiguchi3, A. Akama3, T.J. Konno3, H. Uchida4, D. Kim5, A. Gruverman5(1.Department of Innovative and Engineered Material, Tokyo Tech, 2.Materials Reserch Center for Element Strategy, Tokyo Tech, 3.Institute for Materials Research, Tohoku Univ., 4.Department of Materials and Life Sciences, Sophia Univ., 5.Department of Physics and Astronomy, Univ. of Nebraska, Lincoln (Japan))
[A-4-3]A 4F2-cross-point Phase Change Memory Using Nano-crystalline Doped GeSbTe Material
T. Morikawa1, K. Akita1, M. Kinoshita1, M. Tai1, T. Ohyanagi1, N. Takaura1(1.LEAP (Japan))
[A-6-1]Progress of STT-MRAM Technology and its application to low-power memory systems A key Technology and Prospect of Normally-off memory systems
H. Yoda1, N. Shimomura2, J. Ito2, S. Fujita2, K. Ando3(1.Center For Semiconductor Research & Development, Toshiba Corp., 2.Corporate R&D Center, Toshiba Corp., 3.AIST (Japan))
[A-6-2]Perpendicular Magnetic Tunnel Junctions with L10-MnGa/FeCo Bilayer Electrodes with Tunable Interfacial Exchange Coupling
Q.L. Ma1, S. Mizukami1, X.M. Zhang1, Y. Ando1, T. Miyazaki1(1.Tohoku Univ. (Japan))
[A-6-3]Properties of Perpendicular-Anisotropy Magnetic Tunnel Junctions Fabricated over The Cu Via
S. Miura1, H. Honjo1, K. Kinoshita1, K. Tokutome1, H. Koike2, S. Ikeda2, T. Endoh2, H. Ohno2(1.NEC Corp., 2.Tohoku Univ. (Japan))
[A-6-4]Study about the Process Damage Mechanism of the Patterned Interface Perpendicular Magnetic Tunnel Juncotions (MTJs) by Hydrogen Ion Treatments
J.H. Jeong1,3, T. Endoh1,2(1.Tohoku Univ., 2.Center for Innovative Integrated Electronic Systems (CIES), 3.SAMSUNG Electronics Co., Ltd. (Japan))
[A-7-1]A Power-gated 32bit MPU with a Power Controller Circuit Activated by Deep-sleep-mode Instruction Achieving Ultra-low Power Operation
H. Koike1, T. Ohsawa1, S. Miura1, H. Honjo1, K. Kinoshita2, S. Ikeda1, T. Hanyu1, H. Ohno1, T. Endoh1(1.Tohoku Univ., 2.NEC Corp. (Japan))
[A-7-2]Nonvolatile FPGA Using 2T-1MTJ-Cell-Based Multi-Context Array for Power and Area Efficient Dynamically Reconfigurable Logic
D. Suzuki1, T. Hanyu1(1.Tohoku Univ. (Japan))
[A-7-3]CAAC-OS-based Nonvolatile Programmable Analog Device: Voltage Controlled Oscillator Realizing Instant Frequency Switching
Y. Okamoto1, T. Nakagawa1, T. Aoki1, M. Kozuma1, Y. Kurokawa1, T. Ikeda1, N. Yamade1, Y. Okazaki1, H. Miyairi1, M. Fujita2, S. Yamazaki1(1.Semiconductor Energy Laboratory Co., Ltd., 2.VLSI Design and Education Center, Univ. of Tokyo (Japan))
[A-8-1]Switching current and thermal stability of Perpendicular magnetic tunnel junction with MgO/CoFeB/Ta/CoFeB/MgO recording structure scaling down to 1X nm
H. Sato1,2, T. Yamamoto1,3, E.C.I. Enobio1,4, M. Yamanouchi1,4, S. Ikeda1,2,4, S. Fukami1,2, K. Kinoshita1, F. Matsukura5,1,4, N. Kasai1, H. Ohno1,2,4,5(1.CSIS, Tohoku. Univ., 2.CIIES, Tohoku Univ., 3.ULVAC, Inc., 4.Lab. for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 5.WPI-AIMR, Tohoku Univ. (Japan))
[A-8-2]Impact of Sub-Volume Excitation for Improving Overdrive Delay Product in Sub-40nm p-MTJ and Its Beyond
S. Ohuchida1, K. Ito2, T. Endoh1,2(1.Graduate School of Engineering, Tohoku Univ., 2.Center for Innovative Integrated Electronic Systems, Tohoku Univ. (Japan))
[A-8-3]A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit
T. Ohsawa1, S. Miura2, H. Honjo2, S. Ikeda1, T. Hanyu1, H. Ohno1, T. Endoh1(1.Tohoku Univ., 2.NEC Corp. (Japan))
[A-9-1]Trends on Advanced Semiconductor Memories
A. Nitayama1(1.Tohoku Univ. (Japan))
[A-9-2]Substrate Doping Concentration Dependence on Random Telegraph Noise Spatial and Statistical Distribution in 30nm NAND Flash Memory
T. Tomita1, K. Miyaji1(1.Shinshu Univ. (Japan))
[A-9-3]Comparative Study of Floating Gate Type 3D Fin-Channel Flash Memories with Different Channel Shapes and Interpoly Dielectric Layers
Y.X. Liu1, T. Nabatame2, N. Nguyen2, T. Matsukawa1, K. Endo1, S. O'uchi1, J. Tsukada1, H. Yamauchi1, Y. Ishikawa1, W. Mizubayashi1, Y. Morita1, S. Migita1, H. Ota1, T. Chikyow2, M. Masahara1(1.AIST, 2.NIMS (Japan))
[B-1-1]Germanium Tin Light Emitters on Silicon
E. Kasper1, M. Oehme1(1.Univ. of Stuttgart (Germany))
[B-1-2]Impact of Post-Growth Annealing for Thin-Film Ge Photodiodes on Si
S. Nagatomo1, Y. Kawamata1, Y. Izawa2, S. Hoshino3, Y. Ishikawa1(1.Univ. of Tokyo, 2.Tokyo Electron Miyagi Ltd., 3.Tokyo Electron Ltd. (Japan))
[B-1-3]Electroluminescence from Multiply-Stack of Doped Si Quantum Dots
T. Yamada1, K. Makihara1, M. Ikeda2, S. Miyazaki1(1.Nagoya Univ., 2.Hiroshima Univ. (Japan))
[B-1-4]Observation of Stimulated Raman Scattering in Silica-Cladded Silicon Photonic Crystal Waveguides with Modified Holes
Y.H. Hsiao1, S. Iwamoto1, Y. Arakawa1(1.Univ. of Tokyo (Japan))
[B-1-5]A 0.94-THz Detector in 180-nm Standard CMOS Process
Z. Liu1, L. Liu1, Z. Zhang1, J. Liu1, N. Wu1(1.Chinese Academy of Sci. (China))
[B-2-1]Hybrid III-V on Silicon Lasers
B. Ben Bakir1, C. Sciancalepore1, A. Descos1, H. Duprez1, T. Ferrotti1,2, C. Jany1, J. Harduin1, D. Bordel1, K. Hassan1, A. Chantre2, S. Menezo1(1.CEA, Leti, Minatec Campus, 2.STMicroelectronics (France))
[B-2-2]High Efficiency Apodized Grating Couplers with Metal Mirrors between a-Si:H Multilayer Waveguides toward 3D Optical Interconnection
Y. Kuno1, J. Kang1, Y. Hayashi1, J. Suzuki1, T. Amemiya1, N. Nishiyama1, S. Arai1(1.Tokyo Tech (Japan))
[B-2-3]A High Extinction Ratio Silicon Nitride Polarizing Beam Splitter
J. Feng1, R. Akimoto1(1.AIST (Japan))
[B-2-4]Humidity Tolerance for Athermal Si-Slot Wavelength Filters using Amorphous Fluoride Polymer and SiO2 Protection Layer
Y. Atsumi1, J. Kang1, J. Suzuki1, Y. Hayashi1, N. Nishiyama1, S. Arai1(1.Tokyo Tech (Japan))
[B-2-5L]High-quality thin-film-like multifold Ge/Si/Ge composite quantum-dot hetero-structures for visible to near-infrared photodetection
M.-H. Kuo1, W.-T. Lai1, H.-T. Chang2, S.-W. Lee2, P.-W. Li1(1.Dept. of Electrical Engineering and Center for Nano Science and Technology, National Central Univ., 2.Institute of Materials Science and Engineering, National Central Univ. (Taiwan))
[B-3-1]Demonstration of GaAs based Nanowire Plasmonic Laser
J.F. Ho1, J. Tatebayashi1, S. Sergent1, C.F. Fong1, S. Iwamoto1,2, Y. Arakawa1,2(1.Inst. Nano Quantum Info. Electron., Univ. of Tokyo, 2.Inst. Industrial Sci., Univ. of Tokyo (Japan))
[B-3-2]Optical Coherence Tomography Imaging by Using a Superluminescent Diode Based on InAs/GaAs Quantum Dots
H. Shibata1, T. Yasuda1, S. Ohkouchi2, N. Ikeda3, H. Ohsato3, E. Watanabe3, Y. Sugimoto3, K. Furuki4, K. Miyaji4, R.A. Hogg5, N. Ozaki1(1.Wakayama Univ., 2.NEC Corp., 3.NIMS, 4.Think-Lands Co. Ltd., 5.Univ. Sheffield (Japan))
[B-3-3]Effect of Cavity-Layer Thicknesses on Two-Color Lasing in a Coupled Multilayer Cavity with InAs Quantum Dots
C. Harayama1, S. Katoh1, Y. Nakagawa1,2, X. Lu1, N. Kumagai1, T. Kitada1, T. Isu1(1.Univ. of Tokushima, 2.NICHIA Corp. (Japan))
[B-3-4]Intersubband All-Optical Logic Gate in InGaAs/AlAsSb Quantum Wells
J. Feng1, R. Akimoto1, S. Gozu1(1.AIST (Japan))
[B-3-5]Room Temperature Lasing Characteristics in Metal-Coated GaN Spiral and Grating Structures
S.W. Liao1, W.C. Liao1, K.J. Chen1, M.H. Shih1,2, H.C. Kuo1(1.NCTU, 2.Academia Sinica (Taiwan))
[B-3-6]Highly Efficient White Organic Light Emitting Devices with a Binary Random Phase Array
T. Hirasawa1, Y. Inada1, S. Nishiwaki1, J. Matsuzaki2, Y. Nakamura1, A. Hashiya1, S. Wakabayashi1, M. Suzuki1(1.Panasonic Corp., 2.Panasonic Corp. Eco Solutions Company (Japan))
[B-3-7]Synthetic Multi-Spectral Material Filter Based on Terahertz Metamaterial Combined with Thin-Film Etalon Structure
H. Kang1, H. Jung1, H. Lee1(1.Soongsil Univ. (Korea))
[B-4-1]On-Chip Nonreciprocal Photonic Devices Using Magneto-Optical Oxide Thin Films
L. Bi1, J. Hu2, H.S. Kim3, G.F. Dionne3, C.A. Ross3, X. Liang1, J. Xie1, L. Deng1(1.Univ. of Electron. Sci. and Tech. of China, 2.Univ. of Delaware, 3.Mass. Inst. Tech. (China))
[B-4-2]Optical Isolators and Circulators on Si Waveguide Platforms
T. Mizumoto1, Y. Shoji1(1.Tokyo Inst. of Tech (Japan))
[B-4-3]Double-Dielectric-Loaded Plasmonic Optical Isolator for Integration into Photonic Integrated Circuits
T. Kaihara1, T. Ando1, H. Shimizu1, V. Zayets2, H. Saito2, K. Ando2, S. Yuasa2(1.Tokyo Univ. of Agri. Tech., 2.AIST (Japan))
[B-6-1]Luxtera's Silicon Photonics Platform for Transceiver Manufacturing
M.P. Mack1, A. Ayazi1, Y. Chi1, A. Dahl1, P. De Dobbelaere1, S. Denton1, S. Gloeckner1, K.Y. Hon1, S. Hovey1, Y. Liang1, G. Masini1, A. Mekis1, M. Peterson1, T. Pinguet1, S. Sahni1, J. Schramm1, M. Sharp1, C. Sohn1, K. Stechschulte1, P. Sun1, G. Vastola1, L. Verslegers1, R. Zhou1(1.Luxtera, Inc. (USA))
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