2014 International Conference on Solid State Devices and Materials
Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2014 International Conference on Solid State Devices and Materials
Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-3-4]2T1C Gain Cell Memory with Improved Retention Characteristic By Dual Coupling Method for SOC application Using 45nm-logic compatible CMOS Process
C.J. Lee1, Y.K. Lee1, M.K. Park1, S.W. Kim1, D.H. Lee1(1.Samsung Electronics Corp. (Korea))
