2014 International Conference on Solid State Devices and Materials
Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
2014 International Conference on Solid State Devices and Materials
Sep 8 - Sep 11, 2014Tsukuba International Congress Center (EPOCHAL TSUKUBA), Ibaraki, Japan
[A-4-2]Effect of Oxygen Partial Pressure Under Heat Treatment on Ferroelectricity of (Hf0.5Zr0.5)O2 Thin Films
H. Funakubo1,2, T. Shimizu2, T. Yokouchi1, T. Oikawa1, T. Shiraishi1, T. Kiguchi3, A. Akama3, T.J. Konno3, H. Uchida4, D. Kim5, A. Gruverman5(1.Department of Innovative and Engineered Material, Tokyo Tech, 2.Materials Reserch Center for Element Strategy, Tokyo Tech, 3.Institute for Materials Research, Tohoku Univ., 4.Department of Materials and Life Sciences, Sophia Univ., 5.Department of Physics and Astronomy, Univ. of Nebraska, Lincoln (Japan))
