2015 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2015Sapporo Convention Center, Sapporo, Japan
2015 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2015Sapporo Convention Center, Sapporo, Japan
[A-1-2]High Power and High Temperature Operation over 3W/85°C of an InGaN Laser using a Novel Double-heat-flow Packaging Technology
○S. Nozaki1, S. Yoshida2, K. Yamanaka2, O. Imafuji1, S. Takigawa1, T. Katayama1, T. Tanaka1(1.Panasonic Corp., 2.Panasonic Semiconductor Solutions Co., Ltd.(Japan))
