[PL-1-1]Building a Sustainable Society through Innovative Devices and Materials
○R. Chubachi(AIST(Japan))
2015 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2015Sapporo Convention Center, Sapporo, Japan
You can search for presentations in this event.
Search
2015 International Conference on Solid State Devices and Materials
Sep 27 - Sep 30, 2015Sapporo Convention Center, Sapporo, Japan
You can search for presentations in this event.
SearchSearch Results(894)
[PL-2-1]Beyond blue LED
T. Mitsunari, H. Lee, M. Kushimoto, B. O. Jung, S. Y. Bae, K. Lekhal, M. Deki, Y. Honda, ○H. Amano(Nagoya Univ.(Japan))
[PL-2-2]Low Power Electronics beyond 5nm
○K. L. Wang(UCLA(USA))
[A-1-1](Invited) Photonic Structures in LEDs and Solar Cells
○U. T. Schwarz1, O. Höhn2, B. Bläsi2, C. Wiesmann3, N. Linder4(1.Univ. of Freiburg, 2.Fraunhofer ISE, 3.Osram OS, 4.Osram GmbH(Germany))
[A-1-2]High Power and High Temperature Operation over 3W/85°C of an InGaN Laser using a Novel Double-heat-flow Packaging Technology
○S. Nozaki1, S. Yoshida2, K. Yamanaka2, O. Imafuji1, S. Takigawa1, T. Katayama1, T. Tanaka1(1.Panasonic Corp., 2.Panasonic Semiconductor Solutions Co., Ltd.(Japan))
[A-1-3]High Circular Dichroism Lasing Characteristics in Metal-GaN Spiral Cavity at Room Temperature
○Y. H. Hsiao1, S. W. Liao1, K. J. Chen1, M. H. Shih1,2, H. C. Kuo1(1.National Chiao Tung Univ., 2.Research Center for Applied Sci., Academia Sinica(Taiwan))
[A-1-4]Room Temperature Operation of GaAs/AlGaAs Quantum Nanodisks Light Emitting Diodes Fabricated by Fusion of Bio-Template and Neutral Beam Etching
○Y. C. Lai1,2, A. Higo2, C. Thomas2, T. Kiba3, J. Takayama3, M. Sugiyama4, Y. Nakano4, P. Yu1, A. Murayama3, S. Samukawa1,2(1.National Chiao Tung Univ., 2.Tohoku Univ., 3.Hokkaido Univ., 4.Univ. of Tokyo(Taiwan))
[A-1-5]Plate-Insertion Stacking Method for Three-Dimensional Photonic Crystal Fabrication
○T. Tajiri1, S. Takahashi2, J. Tatebayashi2, S. Iwamoto1,2, Y. Arakawa1,2(1.Institute of Industrial Science, Univ of Tokyo, 2.Institute of Nano Quantum Information Electronics, Univ of Tokyo(Japan))
[A-1-6]Precise Coupling of Single Germanium Quantum Dot to Silicon Photonic Crystal Nanocavity
○C. Zeng1, Y. Ma2, Y. Zhang1, Z. Jiang2, J. Yu1, J. Xia1(1.Huazhong Univ. of Sci. and Tech., 2.Fudan Univ.(China))
[A-2-1](Invited) Magneto-surface-plasmon Effect in Magnetic/Nonmagnetic Films
○Y. Ashizawa, K. Nakagawa(1.Nihon Univ.(Japan))
[A-2-2]Spatially Resolved Pump-probe Magneto-optical Kerr Effect in Permalloy Films
○S. Iihama1, Y. Sasaki1, Y. Ando1, S. Mizukami2(1.Tohoku Univ., 2.WPI-AIMR, Tohoku Univ.(Japan))
[A-2-3]Magneto-Optical Switching Devices Based on Si Photonic Resonators
○K. Noda1, K. Okada1, Y. Amemiya1, S. Yokoyama1(1.Hiroshima Univ.(Japan))
[A-2-4]Electro-Optic Polymer/TiO2 Slot Waveguide Modulators and Enhanced Electro-Optic Coefficient of 260 pm/V
○Y. Enami1, Y. Jouane1, J. Luo2, A. Jen2(1.Kochi Univ. of Tech., 2.Univ. of Washington(Japan))
[A-2-5L]Stimulated Emission with Nearly 100% Circular Polarization at RT in GaAs-based DHs with Fe/Crystalline AlOX Spin Injectors
○N. Nishizawa1, K. Nishibayashi1, H. Munekata1(1.Tokyo Tech(Japan))
[A-2-6L]Electrical Manipulation of Exchange Spring in Antiferromagnetic Metals
○C. Song1, Y. Y. Wang1, S. M. Zhou2, F. Pan1(1.Tsinghua Univ., 2.Tongji Univ.(China))
[A-3-1](Invited) High-Density Optical Interconnection Based on Silicon Photonics
○Y. Tanaka, S. Sekiguchi, K. Morito(1.PETRA(Japan))
[A-3-2]High-Performance MOS Capacitor Type Si Optical Modulator, and Surface Illumination-type Ge Photodetector for Optical Interconnection
○J. Fujikata1, S. Takahashi1, M. Takahashi2, M. Noguchi1, M. Miura1, T. Nakamura1, Y. Arakawa3(1.PETRA, 2.AIST, 3.Univ. of Tokyo(Japan))
[A-3-3]Ultra-Compact 100Gb/s Coherent Receiver Monolithically Integrated on Silicon
○Z. Tu1, P. Gong1, Z. Zhou1, X. Wang1(1.Peking Univ.(China))
[A-3-4]Suppression of Void Generation in Direct Wafer Bonding for Si High-k MOS Optical Modulators using Al2O3/HfO2 Bonding Interface
○J. H. Han1, 2, M. Takenaka1, 2, S. Takagi1, 2(1.Univ. of Tokyo, 2.JST-CREST(Japan))
[A-3-5]Monolithically Integrated Quantum Dot Optical Modulator with Semiconductor Optical Amplifier for T-Band Optical Communication
○N. Yamamoto1, K. Akahane1, T. Umezawa1, A. Matsumoto1, T. Kawanishi1,2(1.NICT, 2.Waseda Univ.(Japan))
[A-3-6]MEMS Optical Switches Using Slot Ring Resonator for Low Voltage Operation
○Y. Amemiya1, K. Noda1, T. Sennichi1, S. Yokoyam1(1.Hiroshima Univ.(Japan))
[A-4-1](Invited) Ge/SiGe Quantum Well Optical Modulator
D. Marris Morini1, V. Vakarin1, ○P. Chaisakul1,2, J. Frigerio3, M. Rouifed1, X. Le Roux1, D. Chrastina3, L. Vivien1, G. Isella3(1.Univ. Paris Sud / IEF, 2.Univ. of Tokyo, 3.L-Ness, Politecnico Di Milano(France))
[A-4-2]Ge/graded-SiGe Multiplication Layers for Low-voltage and Low-noise Ge Avalanche Photodiodes on Si
○Y. Miyasaka1, T. Hiraki2,3, K. Okazaki2,3, K. Takeda2,3, T. Tsuchizawa2,3, K. Yamada2,3, K. Wada1, Y. Ishikawa1(1.Univ. of Tokyo, 2.NTT Device Tech. Labs., 3.NTT Nanophotonics Center(Japan))
[A-4-3]Low Dark Current Ge Photodetector with Selectively Grown Si Capping Layer
○S. Okumura1, K. Kinoshita1, J. Fujikata1, T. Simoyama1, H. Ono1, Y. Tanaka1, K. Morito1, T. Horikawa1, T. Mogami1(1.PETRA(Japan))
[A-4-4]Influences of Metal/Ge Contact and Surface Passivation on Light Emission and Detection for Asymmetric Metal/Ge/Metal Diodes
○T. Maekura1, D. Wang1, K. Yamamoto1, H. Nakashima1(1.Khushu Univ.(Japan))
[A-5-1]Tensile Strain of Germanium Micro-Disks on Freestanding SiO2 Beams
○A. Alattili1, S. Kako2, M. Husain1, F. Gardes1, S. Iwamoto2, Y. Arakawa2, S. Saito1(1.Univ. of Southampton, 2.Univ. of Tokyo(UK))
[A-5-2]Suspended Ge Cross-shaped Microstructures for Enhancing Biaxial Tensile Strain
○S. Ishida1, S. Kako1, K. Oda2, T. Ido2, S. Iwamoto1, Y. Arakawa1(1.Univ. of Tokyo, 2.Hitachi Ltd.(Japan))
[A-5-3]Crystallinity Improvement of Ge Waveguides Fabricated by Epitaxial Lateral Overgrowth and Chemical Mechanical Polishing
○K. Oda1, T. Okumura1, J. Kasai1, S. Kako2, S. Iwamoto2, Y. Arakawa2(1.Hitachi Ltd., 2.Univ. of Tokyo(Japan))
[A-5-4]Temperature Dependent Electroluminescence from GeSn Heterojunction Light Emitting Diode on Si Substrate
○C. Chang1, H. Li1, S. H. Huang1, H. H. Cheng1(1.National Taiwan Univ.(Taiwan))
[A-5-5]Sharp and Intense Si-vacancy Center Emission from Diamond Cube Selective-grown on Si (100) Substrate
○H. Isshiki1, K. Komiya1, R. Kojima1(1.Univ. of Electro-Communications(Japan))
[A-6-1](Invited) Si and SiN Biophotonic Technology Platform, Applied to Biosensing, Spectroscopy, and Lens-Free Imaging
○W. Van Roy1, P. Neutens1, T. Claes1, R. Jansen1, A. Subramanian2, K. Jans1, R. Vos1, J. O'Callaghan1, D. Vercruysse1, R. Stahl1, V. Mukund1, B. Du Bois1, P. Helin1, A. Stassen1, S. Severi1, D. Martens2, P. Bienstman2, P. Deshpande1, R. Baets2, A. Lambrechts1, L. Lagae1,3, X. Rottenberg1, P. Van Dorpe1,3(1.Imec, 2.Ghent Univ., 3.KU Leuven(Belgium))
[A-6-2]Stretchable Photonic Crystal Coupled-Nanobeam Lasers for Stretch Sensing
○C. Wang1, T. W. Lu1, P. T. Lee1(1.National Chiao Tung Univ.(Taiwan))
[A-6-3]Gold Bowtie Aperture with Projected Pad Underneath and Its Capability in Optical Sensing
○P. Y. Chen1, T. W. Lu1, P. T. Lee1(1.National Chiao Tung Univ.(Taiwan))
[A-7-1]Heterogeneous Quantum Dots/Silicon Photonics Wavelength Tunable Laser Diode
○T. Kita1, N. Yamamoto2, T. Kawanishi2, H. Yamada1(1.Tohoku Univ., 2.National Institute of Information and Communications Technology(Japan))
[A-7-2]Waveguide InGaAs Metal-semiconductor-metal Photodetector Monolithically Integrated with InP Grating Coupler on III-V CMOS Photonics Platform
○Y. P. Cheng1, 2, Y. Ikku1, 2, M. Takenaka1, 2, S. Takagi1, 2(1.Univ. of Tokyo, 2.JST-CREST(Japan))
[A-7-3]1.3 μm Photoluminescence from InAs/GaAs Quantum Dots on CMOS-compatible (001) Silicon by Metal-organic Chemical Vapor Deposition
○Y. Wan1, Q. Li1, Y. Geng1, K. M. Lau1(1.Hong Kong Univ. of Sci. and Tech.(China))
[A-7-4]Optical and Electronic Properties of Ga(N,As,P) Quantum Wells on Silicon for Laser Application
○S. Gies1, S. Karrenberg1, M. Zimprich1, T. Wegele1, C. Kruska1, A. Beyer1, W. Stolz1, K. Volz1, W. Heimbrodt1(1.Philipps Univ. Marburg(Germany))
[A-7-5]The Influence of III-V on Insulator Structure on Quantum Well Intermixing
○S. Takashima1,2, Y. Ikku1,2, M. Takenaka1,2, S. Takagi1,2(1.Univ. of Tokyo, 2.JST-CREST(Japan))
[A-7-6]Fabrication of Two-Color Surface Emitting Device of a Coupled Cavity Structure with InAs QDs Formed by Wafer-Bonding
○H. Ota1, C. Harayama1, T. Maekawa1, X. M. Lu1, N. Kumagai1, T. Kitada1, T. Isu1(1.Tokushima Univ.(Japan))
[A-7-7]Demonstration of Two-Wavelength Lasing in a GaAsP Ring/Fabry-Perot Composite Cavity Semiconductor Laser
○A. K. Saha1, T. Suhara1(1.Osaka Univ.(Japan))
[B-4-1](Invited) Growth and Applications of Surface Oxides on Two-Dimensional Transition Metal Dichalcogenides
○M. Yamamoto(1.NIMS(Japan))
[B-4-2]Josephson Coupling in NbSe2/NbSe2 Van Der Waals Junction
○R. Moriya1, N. Yabuki1, M. Arai1, Y. Sata1, S. Morikawa1, S. Masubuchi1, T. Machida1,2(1.IIS, Univ. of Tokyo, 2.INQIE, Univ. of Tokyo(Japan))
[B-4-3]In Situ and Nonvolatile Tuning of Sp2/Sp3 Fraction in Graphene Oxide For All-Solid-State Multifunctional Devices
○T. Tsuchiya1, T. Tsuruoka1, K. Terabe1, M. Aono1(1.National Inst. for Materials Sci.(Japan))
[B-4-4]N-type Doping Effect of Transferred MoS2 and WSe2 Monolayer
○C. P. Lin1, P. S. Liu1, L. S. Lyu1, M. Y. Li2, C. C. Cheng1, T. H. Lee1, W. H. Chang1, L. J. Li3, T. H. Hou1(1.National Chiao Tung Univ., 2.Academia Sinica, 3.King Abdullah Univ. of Science and Technology(Taiwan))
[B-5-1](Invited) Transport Studies in Graphene and Black Phosphorus Field Effect Transistors
○B. Özyilmaz(1.NUS(Singapore))
[B-5-2]Band-to-Band Graphene Resonant Tunneling Field Effect Transistor
○S. Suzuki1, M. Muruganathan1, S. Oda2, H. Mizuta1,3(1.JAIST, 2.Tokyo Tech, 3.Univ. of Southampton(Japan))
[B-5-3]Influence of Local Electric Field on Electronic States of Graphene Nanoribbons
○A. Yamanaka1, S. Okada1(1.Univ. of Tsukuba(Japan))
[B-5-4]Back Gate Bias-Temperature Instability in Single-Layer Double-Gated Graphene Field-Effect Transistors
○Y. Y. Illarionov1,2, M. Waltl1, A. D. Smith3, S. Vaziri3, M. Ostling3, M. Lemme4, T. Grasser1(1.Inst. for Microelectronics (TU Wien), 2.Ioffe Physical-Technical Inst., 3.KTH Royal Inst. of Technology, 4.Univ. of Siegen(Austria))
[C-1-1](Invited) Bandgap Science for Organic Solar Cells
○M. Hiramoto1,2(1.Institute for Molecular Science, 2.JST-CREST(Japan))
[C-1-2](Invited) Low Temperature Solution Processable n-i-p Perovskite Solar Cell
C. Y. Chu, C. Y. Chang, ○W. F. Su(1.National Taiwan Univ.(Taiwan))
894 results ( 1 - 50 )
- 1
- ...