[A-4-2]Ge/graded-SiGe Multiplication Layers for Low-voltage and Low-noise Ge Avalanche Photodiodes on Si
○Y. Miyasaka1, T. Hiraki2,3, K. Okazaki2,3, K. Takeda2,3, T. Tsuchizawa2,3, K. Yamada2,3, K. Wada1, Y. Ishikawa1(1.Univ. of Tokyo, 2.NTT Device Tech. Labs., 3.NTT Nanophotonics Center(Japan))
