2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2015Sapporo Convention Center, Sapporo, Japan
International Conference on Solid State Devices and Materials
2015 International Conference on Solid State Devices and Materials

2015 International Conference on Solid State Devices and Materials

Sep 27 - Sep 30, 2015Sapporo Convention Center, Sapporo, Japan

[B-4-4]N-type Doping Effect of Transferred MoS2 and WSe2 Monolayer

C. P. Lin1, P. S. Liu1, L. S. Lyu1, M. Y. Li2, C. C. Cheng1, T. H. Lee1, W. H. Chang1, L. J. Li3, T. H. Hou1(1.National Chiao Tung Univ., 2.Academia Sinica, 3.King Abdullah Univ. of Science and Technology(Taiwan))
https://doi.org/10.7567/SSDM.2015.B-4-4