[A-5-02]Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window
○K. Koi1, H. Yoda1, N. Shimomura1, T. Inokuchi1, Y. Kato1, B. Altansargai1, S. Shirotori1, Y. Kamiguchi1, K. Ikegami1, S. Oikawa1, H. Sugiyama1, M. Shimizu1, M. Ishikawa1, T. Ajay1, Y. Ohsawa1, Y. Saito1, A. Kurobe1(1.Toshiba Corp. (Japan))
