[OP-01]Welcome Address
H. Ohno1(Tohoku Univ.)
2017 International Conference on Solid State Devices and Materials
Sep 19 - Sep 22, 2017Sendai International Center
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2017 International Conference on Solid State Devices and Materials
Sep 19 - Sep 22, 2017Sendai International Center
You can search for presentations in this event.
SearchSearch Results(754)
[PL-1-01]The Semiconductor Industry: Changed and Unchanged
T. Higashi1(Tokyo Electron Ltd.)
[PL-2-01]What is Next in Computing? -A Semiconductor Perspective
P. Ranade1(Intel Corp.)
[PL-2-02]Research on Nitride Semiconductors from the Dawn, through the Present, to the Future
T. Matsuoka1(Tohoku Univ.)
[AW-01]SSDM Award/SSDM Papar Award Ceremony
[A-1-01 (Invited)]Electric, Magnetic, and Optical Control of Multiferroics
○M. Matsubara1(1.Tohoku Univ. (Japan))
[A-1-02 (Invited)]Magneto-optical Spatial Light Modulator for 3D Holographic Display
○K. Aoshima1, H. Kinjo1, D. Kato1, N. Funabashi1, S. Aso1, K. Machida1, K. Kuga1, T. Mishina1, T. Ishibashi2, H. Kikuchi1(1.NHK Japan Broadcasting Corp. (Japan), 2.Nagaoka Univ. of Tech. (Japan))
[A-1-03]Ultra-compact Circular Polarized Metal/GaN Double-Spiral Cavity Lasers
○C. A. Lin1, S. W. Liao1, Y. H. Hsiao1, C. L. Yu1, H. C. Kuo1, M. H. Shih2(1.National Chiao Tung Univ. (Taiwan), 2.RCAS, Academia Sinica (Taiwan))
[A-1-04 (Invited)]Functional Oxides for Photonics
○J. Fompeyrine1, F. Eltes1, S. Abel1(1.IBM Research - Zurich (Switzerland))
[A-2-01 (Invited)]Magnetic Skyrmions in Confined Geometries
H. Du1,2, C. Jin1, X. Wang3, R. Che3,○M. Tian1,2(1.Chinese Academy of Sci. (China), 2.Anhui Univ. (China), 3.Fudan Univ. (China))
[A-2-02]Determination of Dzyaloshinskii-Moriya Interaction Energy by Extended Droplet Model
○S. Kim1, P. -H. Jang2, D. -H. Kim1, M. Ishibashi1, T. Taniguchi1, T. Moriyama1, K. -J. Kim3,1, K. -J. Lee2, T. Ono1(1.Kyoto Univ. (Japan), 2.Korea Univ. (Korea), 3.KAIST (Korea))
[A-2-03]Spin Orbit Torques in Heavy-Metal/Ferromagnet/Normal-Metal Trilayers
○Y. Du1,2, Y. -C. Lau1,3, J. Nitta2, M. Hayashi1,3(1.Nat'l. Inst. for Mater. Sci. (Japan), 2.Tohoku Univ. (Japan), 3.Univ. of Tokyo (Japan))
[A-2-04]Device Size Dependence of Spin-orbit Torque Induced Magnetization Switching in W/CoFeB/MgO
○C. Zhang1, S. Fukami1, S. DuttaGupta1, H. Sato1, H. Ohno1(1.Tohoku Univ. (Japan))
[A-2-05]Detection of heating effect due to magneto-static surface spin wave in CoFeB film
○K. Yamanoi1, T. Kimura1(1.Kyushu Univ. (Japan))
[A-2-06]Current Density Dependence of Asymmetric Magnetoresistance in Pt/Py Bilayers Under Various Magnetic Field Strength
○T. Li1, S. Kim1, S. -J. Lee2, S. -W. Lee2, T. Koyama3, D. Chiba3, T. Moriyama1, K. -J. Lee2, K. -J. Kim1,4, T. Ono1,5(1.Kyoto Univ. (Japan), 2.Korea Univ. (Korea), 3.Univ. of Tokyo (Japan), 4.KAIST (Korea), 5.Osaka Univ. (Japan))
[A-5-01 (Invited)]Accumulative Magnetic Switching of Ultrahigh-Density Recording Media by Circularly Polarized Light
○Y. K. Takahashi1, R. Medapalli2, S. Kasai1, J. Wang1, K. Ishioka1, S. H. Wee3, O. Hellwig4, K. Hono1, E. E. Fullerton2(1.NIMS (Japan), 2.UCSD (USA), 3.HGST (USA), 4.Institut für Ionenstrahlphysik und Materialforschung (Germany))
[A-5-02]Switching Mechanism Design for High-speed Voltage-Control Spintronics Memory (VoCSM) Considering the Operation Window
○K. Koi1, H. Yoda1, N. Shimomura1, T. Inokuchi1, Y. Kato1, B. Altansargai1, S. Shirotori1, Y. Kamiguchi1, K. Ikegami1, S. Oikawa1, H. Sugiyama1, M. Shimizu1, M. Ishikawa1, T. Ajay1, Y. Ohsawa1, Y. Saito1, A. Kurobe1(1.Toshiba Corp. (Japan))
[A-5-03]Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM
○T. Sasaki1,2,3, T. Endoh1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))
[A-5-04 (Invited)]Key advanced technology for eMRAM development
○J. Lee1, H. Jung1, K. Lee1, Y. Song1, G. -H. Koh1, G. -T. Jeong(1.Samsung Electronics Co., Ltd. (Korea))
[A-6-01]Voltage-Control Spintronics Memory (VoCSM) having a potential of high write-efficiency
○M. Shimizu1, H. Yoda1, S. Shirotori1, N. Shimomura1, Y. Ohsawa1, T. Inokuchi1, K. Koui1, Y. Kato1, S. Oikawa1, H. Sugiyama1, A. Buyandalai1, M. Ishikawa1, K. Ikegami1, Y. Kamiguchi1, Y. Saito1, A. Kurobe1(1.Toshiba Corp. (Japan))
[A-6-02]Sub 1 V 60 nm Vertical Body Channel MOSFET Based 6T SRAM Array with Wide Noise Margin and Excellent Power Delay Product
○R. Ogasawara1,2,3, T. Endoh1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))
[A-6-03]In-situ Observation of Cu Residuals in Resistance Switching Failure of MoOx/Al2O3 CBRAM
○M. Arita1, R. Ishikawa1, S. Hirata1, A. Turumaki-Fukuchi1, Y. Takahashi1(1.Hokkaido Univ. (Japan))
[A-7-01]The Experimental Observations of a New Dielectric-fuse Breakdown in a Bilayer-RRAM to Realize the OTP Functionality
○E. R. Hsieh1, H. W. Cheng1, Z. H. Huang1, C. H. Chuang1, C. H. Chen1, S. Chung1(1.National Chiao Tung Univ. (Taiwan))
[A-7-02]A Novel Ternary Content Addressable Memory Design Based on RRAM with High Intensity and Low Search Energy
○R. Han1, W. Shen1, P. Huang1, Z. Zhou1, L. Liu1, X. Liu1, J. Kang1(1.Peking Univ. (China))
[A-7-03]Error Free Physically Unclonable Function (PUF) with Programmed ReRAM using Reliable Resistance States by Novel ID-Generation Method
○P. H. Tseng1(1.Macronix International Co., Ltd. (Taiwan))
[A-7-04]Highly Reliable Logic-Compatible MTP Memory for Automotive Applications
○C. Y. Lo1, S. C. Wang1(1.eMemory Technology Inc. (Taiwan))
[A-8-01 (Invited)]Transition Metal-Ge-Te Chalcogenides for PCRAM Material
○Y. Sutou1, S. Shindo1, S. Hatayama1, Y. Saito2, J. Koike1(1.Tohoku Univ. (Japan), 2.AIST (Japan))
[A-8-02]Origin of the difference between high resistive and low resistive structures for interfacial phase change memories based on GeTe/Sb2Te3 superlattice
○H. Shirakawa1, M. Araidai1, K. Shiraishi1(1.Nagoya Univ. (Japan))
[A-8-03]Thermal Stability and Switching Performance of iPCM at Elevated Temperature
○K. V. Mitrofanov1, Y. Saito1, N. Miyata1, P. Fons1, A. V. Kolobov1, J. Tominaga1(1.AIST (Japan))
[A-8-04]Continuous Multilevel Compact Model of Subthreshold Conduction and Threshold Switching in Phase-Change Memory
○C. Pigot1,2,3, F. Gilibert1, M. Reyboz2, M. Bocquet3, P. Zuliani4, J. -M. Portal3(1.STMicroelectronics, Crolles (France), 2.CEA-Leti (France), 3.IM2NP, Aix-Marseille Univ. (France), 4.STMicroelectronics, Agrate (Italy))
[A-8-05 (Late News)]Programming Current Reduction in GeS2+Sb2Te3 Based Phase-Change Memory
○J. Kluge1,2,3, A. Verdy2, G. Navarro2, S. Blonkowski1, V. Sousa2, P. Kowalczyk2, M. Bernard2, N. Bernier2, G. Bourgeois2, N. Castellani2, P. Noé2, E. Nowak2, L. Perniola2(1.STMicroelectronics (France), 2.CEA-Leti (France), 3.IMEP-LAHC (France))
[B-1-01 (Invited)]Significant Lifetime Enhancement of Organic Light Emitting Diodes by Removing Residual Water during Device Fabrication
○H. Murata1, L. C. Duy1, S. Oyama1, H. Sakai1(1.JAIST (Japan))
[B-1-02]Introducing optical resonators into polymer light-emitting electrochemical cells
○T. Zhang1, T. Sakanoue1, T. Takenobu1(1.Nagoya Univ. (Japan))
[B-1-03]Single-Crystal Perovskite CH3NH3PbBr3 Prepared by Cast-capping Method for Light-Emitting Diodes
○V. -C. Nguyen1, H. Katsuki1, F. Sasaki2, H. Yanagi1(1.NAIST (Japan), 2.AIST (Japan))
[B-1-04 (Late News)]Compression of Organic Thin-films by Cold Isostatic Pressing for Enhanced Device Properties
○Y. Esaki1, T. Matsushima1,2,3, C. Adachi1,2,3(1.Kyushu Univ. (Japan), 2.JST ERATO (Japan), 3.WPI-I2CNER (Japan))
[B-1-05]Photo-responsible polarization switching in TiOPc/P (VDF–TrFE) stacking films
○Y. Koshiba1, H. Horii1, M. Morimoto1,2, M. Misaki1,3, T. Fukushima1, K. Ishida1(1.Kobe Univ. (Japan), 2.Univ. of Toyama (Japan), 3.Kindai Univ. Tech. Col. (Japan))
[B-1-06]Shape changes of azobenzene particles induced by linearly polarized laser light
○Y. Ohdaira1, Y. Ikeda1, H. Oka1, K. Shinbo1(1.Niigata Univ. (Japan))
[B-2-01 (Invited)]Flexible Printed Organic TFT Devices and Potential Applications
○S. Tokito1(1.Yamagata Univ. (Japan))
[B-2-02]Temperature Dependence of Transport Properties in dinaphtho[2,3-b:2’,3’-d] thiophene Thin-Film Transistors with MoO3/Au Electrodes
S. Shaari1,2, S. Naka1,○H. Okada1(1.Univ. of Toyama (Japan), 2.Univ. Malaysia Perlis (Malaysia))
[B-2-03]Studies on correlation of surface and electrical properties in pentacene and thienoacene-based organic thin film transistors
S. Sharri1,2, S. Naka1,○H. Okada1(1.Univ. of Toyama (Japan), 2.Univ. Malaysia Perlis (Malaysia))
[B-2-04]Influence of Surface Treatment of SiO2 Gate Insulator for Pentacene-based OFETs with Nitrogen-doped LaB6 Bottom-Contact Electrode Formation Process
○Y. Maeda1, M. Hiroki1, S. Ohmi1(1.Tokyo Tech (Japan))
[B-2-05]Crystal Structure Analyses of Organic Semiconductor Thin Films with Variable-Temperature Two-Dimensional Grazing Incidence X-ray Diffraction
○R. Abe1, H. Kojima1, M. Kikuchi2, T. Watanabe3, T. Koganezawa3, N. Yoshimoto2, I. Hirosawa3, M. Nakamura1(1.NAIST (Japan), 2.Iwate Univ. (Japan), 3.Japan Synchrotron Radiation Research Institute (Japan))
[B-2-06]Temperature Dependence of Carrier Mobility on Non-Peripherally Octahexyl-Substituted Copper Phthalocyanine
○Ken Watanabe1, Koichi Watanabe1, N. Tohnai1, A. Fujii1, M. Ozaki1(1.Osaka Univ. (Japan))
[B-3-01 (Invited)]Fundamentals and Applications of Nano-molecular devices
○N. Clement1(1.NTT Basic Res. Labs. (Japan))
[B-3-02]Electron Injection on Metal/n-doped Polymer Semiconductor
○S. Sakiyama1, A. Yasukochi1, T. Iwashita1, K. Fujita1(1.Kyushu Univ. (Japan))
[B-3-03]Precipitation of thin film organic single crystals by a novel crystal growth method using electrospray and ionic liquid layer
○H. Ueda1, K. Takeuchi1, A. Kikuchi1,2(1.Sophia Univ. (Japan), 2.Sophia Nanotechnology Research Center (Japan))
[B-3-04]Theoretical Studies of π-Conjugate Molecules Embedded in hexagonal boron nitride
W. Xie1, T. Tamura1, T. Yanase1, T. Nagahama1,○T. Shimada1(1.Hokkaido Univ. (Japan))
[B-3-05]A Design-analysis Flow Considering Mechanical Stability of Metal Masks for Organic CMOS Circuits
○M. Shintani1, K. Kuribara2, Y. Ogasahara2, M. Hiromoto1, T. Sato1(1.Kyoto Univ. (Japan), 2.AIST (Japan))
[B-3-06]Dimer Formation of Pentacene by Heated Tungsten
○A. Heya1, N. Matsuo1(1.Univ. of Hyogo (Japan))
[B-4-01 (Invited)]The Excitonics in Photonic Colloidal Nanostructures and Devices
H. Lee1, Y. Kim1,○S. Lee1(1.Seoul National Univ. (Korea))
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