2017 International Conference on Solid State Devices and Materials
Sep 19 - Sep 22, 2017Sendai International Center
2017 International Conference on Solid State Devices and Materials
Sep 19 - Sep 22, 2017Sendai International Center
[A-5-03]Cross Point Type 1T-1MTJ STT-MRAM Cell with 60 nm Multi-pillar Vertical Body Channel MOSFET under 55 nm p-MTJ and Its Beyond for High Density STT-MRAM
○T. Sasaki1,2,3, T. Endoh1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))
