2017 International Conference on Solid State Devices and Materials
Sep 19 - Sep 22, 2017Sendai International Center
2017 International Conference on Solid State Devices and Materials
Sep 19 - Sep 22, 2017Sendai International Center
[A-6-02]Sub 1 V 60 nm Vertical Body Channel MOSFET Based 6T SRAM Array with Wide Noise Margin and Excellent Power Delay Product
○R. Ogasawara1,2,3, T. Endoh1,2,3(1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))
