2017 International Conference on Solid State Devices and Materials
Sep 19 - Sep 22, 2017Sendai International Center
[A-8-02]Origin of the difference between high resistive and low resistive structures for interfacial phase change memories based on GeTe/Sb2Te3 superlattice
○H. Shirakawa1, M. Araidai1, K. Shiraishi1(1.Nagoya Univ. (Japan))