2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

Sep 19 - Sep 22, 2017Sendai International Center
International Conference on Solid State Devices and Materials
2017 International Conference on Solid State Devices and Materials

2017 International Conference on Solid State Devices and Materials

Sep 19 - Sep 22, 2017Sendai International Center

[B-2-04]Influence of Surface Treatment of SiO2 Gate Insulator for Pentacene-based OFETs with Nitrogen-doped LaB6 Bottom-Contact Electrode Formation Process

Y. Maeda1, M. Hiroki1, S. Ohmi1(1.Tokyo Tech (Japan))
https://doi.org/10.7567/SSDM.2017.B-2-04