2018 International Conference on Solid State Devices and Materials
Sep 9 - Sep 13, 2018University of Tokyo
2018 International Conference on Solid State Devices and Materials
Sep 9 - Sep 13, 2018University of Tokyo
[A-1-02]Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions
○S. Sato1, R. Nakane2,1, T. Hada1, M. Ichihara1, M. Tanaka1,3(1.EEIS, Univ. of Tokyo (Japan), 2.IIIEE, Univ. of Tokyo (Japan), 3.CSRN, Univ. of Tokyo (Japan))
