[OP]Welcome Address
A. Toriumi(General Chair, Organizing Committee)
2018 International Conference on Solid State Devices and Materials
Sep 9 - Sep 13, 2018University of Tokyo
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2018 International Conference on Solid State Devices and Materials
Sep 9 - Sep 13, 2018University of Tokyo
You can search for presentations in this event.
SearchSearch Results(922)
[OP]Welcome Address
S. Zaima(President, The Japan Society of Applied Physics)
[PL-01 (Plenary)]A mathematical challenge to a new phase of materials science
M. Kotani(Tohoku Univ. (Japan))
[AW]SSDM Award/SSDM Paper Award/SSDM Young Researcher Award Ceremony
[PL-02 (Plenary)]Exploration of Materials and Devices for Beyond CMOS Technology for Computing
I. Young(Intel Corp. (USA))
[PL-03 (Plenary)]Skin-Inspired Electronics
Z. Bao(Stanford Univ. (USA))
[A-1-01 (Invited)]Spintronics in 2D Materials
○R. Kawakami1(1.The Ohio State Univ. (USA))
[A-1-02]Spin tunneling into Si measured by three-terminal Hanle signals in vertical and lateral Si devices with Fe/Mg/MgO/Si tunnel junctions
○S. Sato1, R. Nakane2,1, T. Hada1, M. Ichihara1, M. Tanaka1,3(1.EEIS, Univ. of Tokyo (Japan), 2.IIIEE, Univ. of Tokyo (Japan), 3.CSRN, Univ. of Tokyo (Japan))
[A-1-03]Temperature Dependence of Nonlocal Spin Transport in Si<100> Lateral Spin-Valve Devices
○M. Ishikawa1,2, M. Tsukahara1, M. Yamada1, Y. Fujita1, K. Hamaya1,3(1.Osaka Univ. (Japan), 2.Toshiba Corp. (Japan), 3.Center for Spintronics Research Network (Japan))
[A-1-04]Nearly ideal spin tunneling efficiency by lowering the trap density at an amorphous-MgO / n+-Si(001) interface with a SiO x insertion layer
○M. Ichihara1, S. Sato1, M. Tanaka1, R. Nakane1(1.Univ. of Tokyo (Japan))
[A-2-01 (Invited)]Ultralow-Power and Compact Nonvolatile Brain-Inspired VLSIs Based on CMOS/MTJ Hybrid Technology
○T. Endoh1, Y. Ma1(1.Tohoku Univ. (Japan))
[A-2-02 (Invited)]Saving Energy Consumption of Memory Systems by Voltage-Control Spintronics Memory (VoCSM)
○H. Yoda1, Y. Ohsawa1, Y. Kato1, N. Shimomura1, M. Shimizu1, K. Koi1, S. Shirotori1, T. Inokuchi1, H. Sugiyama1, S. Oikawa1, B. Altansargai1, A. Kurobe1(1.Toshiba Corp. (Japan))
[A-2-03 (Invited)]Using (emerging) memories for machine learning hardware
○D. Verkest1, D. Rodopoulos1, B. Verhoef1, A. Mallik1, J. Constantin1, P. Debacker1, J. Stuijt2, R. Appeltans1, D. Garbin1, A. Mocuta1, G.S. Kar1, A. Furnemont1(1.IMEC (Belgium), 2.IMEC-NL (The Netherlands))
[A-2-04 (Late News)]Time-resolved Conductance in Electrochemical Systems for Neuromorphic Computing
○D.M. Bishop1, P. Solomon1, S. Kim1, J. Tang1, J. Tersoff1, T. Todorov1, M. Copel1, J. Collins1, K.T. Lee1, S. Shin1, Wilfried Haensch1, John Rozen1(1.IBM Research (USA))
[A-3-01]Study of Quantisation Accuracy Breakdown due to High Temperature and High Frequency in a Silicon Single-Electron Pump
○N. Johnson1, G. Yamahata1, A. Fujiwara1(1.NTT Basic Research Labs (Japan))
[A-3-02]Random-Telegraph-Noise and Wave-Particle Duality Found in a Silicon Nano-Wire
○K. Ibukuro1, L. Fayong1, M.K. Husain1, Z. Li1, Y. Tsuchiya1, H. Rutt1, S. Saito1(1.Univ. of Southampton (UK))
[A-3-03]Fabrications and transport properties of SiGe self-assembled quantum dots
○M. Tanaka1, K. Kawaguchi1, H. Kiyama1, M. Bamesreiter2, D. Bougeard2, A. Oiwa1(1.Osaka Univ. (Japan), 2.Univ. of Regensburg (Germany))
[A-3-04]Size and Matrix-strain Effects on Ge Quantum Dots Light Emission
○S.H. Chiu1, C.W. Tien1, S.D. Lin1, W.H. Chang1, H.C. Lin1, P.W. Li1(1.National Chiao Tung Univ. (Taiwan))
[A-3-05]Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si
○H. Tonegawa1, Y. Kumagai1, S. Fukuyama1, K. Hirose1, M. Watanabe1(1.Tokyo Tech (Japan))
[A-3-06 (Late News)]Quantum Antidot with Fully and Partially Depleted Regions in the Quantum Hall Regime
○H. Aramaki1, R. Eguchi1, E. Kamata1, T. Fujisawa1(1.Tokyo Tech (Japan))
[A-4-01 (Invited)]Microscopic Mechanism of the Electric-Field Effects on Spintronics Devices Elucidated by X-ray Magnetic Circular Dichroism Spectroscopy
○M. Suzuki1, M. Tsujikawa2,3, T. Nozaki4, T. Nakamura1, M. Shirai2,3, S. Yuasa4, Y. Suzuki5,6, S. Miwa5,6,7(1.JASRI (Japan), 2.RIEC, Tohoku Univ. (Japan), 3.CSRN, Tohoku Univ. (Japan), 4.AIST, Spintronics Res. Center (Japan), 5.Osaka Univ. (Japan), 6.CSRN, Osaka Univ. (Japan), 7.ISSP, Univ. of Tokyo (Japan))
[A-4-02]Study of voltage-controlled magnetic anisotropy (VCMA) in a FeB thin film and a FeB/W multilayer by the Anomalous Hall effect
○V. Zayets1, T. Nozaki1, A. Fukushima1, H. Saito1, S. Yuasa1(1.AIST (Japan))
[A-4-03]N-type ferromagnetic semiconductor (In,Fe)Sb with high Curie temperature: Electrical control of ferromagnetism
○N.T. Tu1,2, P.N. Hai3,4, L.D. Anh1, M. Tanaka1,4(1.Univ. of Tokyo (Japan), 2.Univ. of Pedagogy HCMC (Viet Nam), 3.Tokyo Tech (Japan), 4.CSRN Univ. of Tokyo (Japan))
[A-4-04]Current-driven Switching of Antiferromagnets
○C. Song1, X. Chen1, R. Zarzuela2, J. Zhang3, W. Jiang1, F. Pan1, Y. Tserkovnyak2(1.Tsinghua Univ. (China), 2.UCLA (USA), 3.Huazhong Univ. of Sci. & Tech. (China))
[A-5-01 (Invited)]Nonreciprocal Electronic Devices for Matter Waves
○J. Mannhart1, D. Braak1(1.Max Planck Inst. for Solid State Res. (Germany))
[A-5-02]Properties of Shallow Nitrogen Vacancy Centers in Nitrogen Terminated Diamond and Detection of Nuclear Magnetic Resonance
○T. Sonoda1, S. Kawai1, H. Yamano1, K. Kato1, J.J. Buendia1, T. Kageura1, Y. Ishii1, K. Nagaoka1, R. Fukuda1, T. Okada1, M. Haruyama2,3, T. Tanii1, K. Yamada2, S. Onoda2, W. Kada3, O. Hanaizumi3, A. Stacey4, T. Teraji5, S. Kono7, J. Isoya6, H. Kawarada1,7(1.Waseda Univ. (Japan), 2.QST (Japan), 3.Gunma Univ. (Japan), 4.Melbourne Univ. (Australia), 5.NIMS (Japan), 6.Univ. of Tsukuba (Japan), 7.Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))
[A-5-03]Superconducting Boron-doped Diamond Josephson Junction Operating above Liquid He Temperature, 4.2 K
○S. Amano1, T. Kageura1, I. Tsuyuzaki1, M. Tachiki2, S. Oi2, K. Hirata2, S. Arisawa2, H. Osato2, D. Tsuya2, Y. Takano2, H. Kawarada1,3(1.Waseda Univ. (Japan), 2.National Institute for Materials Science (Japan), 3.The Kagami Memorial Laboratory for Materials Science and Technology (Japan))
[A-5-04]New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching
○T. Yajima1, T. Nishimura1, A. Toriumi1(1.Univ. of Tokyo (Japan))
[A-5-05]Relaxation Oscillations in a Nonlinearly Driven GaAs MEMS Resonator
○S. Houri1, R. Ohta1, M. Asano1, Y.M. Blanter2, H. Yamaguchi1(1.NTT Basic Research Labs (Japan), 2.Delft University of Technology (Netherlands))
[A-6-01 (Invited)]Skyrmions in magnetic multilayers: materials physics and device applications
○W. Jiang1(1.Tsinghua Univ. (China))
[A-6-02]Spin Seebeck voltage enhancement by IrMn and Mn insertion at the interface between YIG and nonmagnetic layer
○F. Nakata1, T. Niimura1, Y. Kurokawa1, H. Yuasa1,2(1.Kyushu Univ. (Japan), 2.JST PRESTO (Japan))
[A-6-03]Magnetic tunnel junctions with an equiatomic CoFeMnSi electrode
○L. Bainsla1, K. Suzuki1,2, M. Tsujikawa3,2, H. Tsuchiura4,2, M. Shirai3,2, S. Mizukami1,2(1.AIMR, Tohoku Univ. (Japan), 2.CSRN, Tohoku Univ. (Japan), 3.RIEC, Tohoku Univ. (Japan), 4.Grad. Sch. Engn., Tohoku Univ. (Japan))
[A-6-04]Spin Wave and Phonon Excitation by the Magnetoelectric Effect
○D. Tierno1,2, T. Jost3, M. Geilen3, T. Brächer3, M. Heyns1,2, B. Hillebrands3, I.P. Radu1, P. Pirro3, F. Ciubotaru1, C. Adelmann1(1.imec (Belgium), 2.KU Leuven (Belgium), 3.TU Kaiserslautern (Germany))
[A-7-01 (Invited)]Controlling spin-orbit interaction in scalable silicon-MOS quantum dot architectures
○T. Tanttu1, B. Hensen1, K.W. Chan1, H. Yang1, W. Huang1, M. Fogarty1, D. Culcer1,2, K. Itoh3, A. Laucht1, A. Morello1, A. Dzurak1(1.The Univ. of New South Wales (Australia), 2.ARC Centre for Excellence in Future Low-Energy Electronics Technologies (Australia), 3.Keio Univ. (Japan))
[A-7-02]Control fidelities in isotopically natural and enriched silicon quantum dot qubits
○K. Takeda1, J. Yoneda1, T. Otsuka1,2,3, T. Nakajima1, M. Delbecq1,4, G. Allison1, A. Noiri1, Y. Hoshi5, N. Usami6, K. Itoh7, S. Oda8, T. Kodera9, S. Tarucha10(1.RIKEN, CEMS (Japan), 2.JST, PRESTO (Japan), 3.Tohoku Univ. (Japan), 4.LPA, Ecole Normale Supérieure-PSL Res. Univ. (France), 5.IIS, Univ. of Tokyo (Japan), 6.Nagoya Univ. (Japan), 7.Keio Univ. (Japan), 8.Dept. of Physical Electronics and Quantum Nanoelectronics Res. Center, Tokyo Tech (Japan), 9.Dept. of Electrical and Electronic Engineering, Tokyo Tech (Japan), 10.Dept. of Applied Physics, Univ. of Tokyo (Japan))
[A-7-03]Coherent oscillations of charge states in a Si single-electron pump at 4.2 K
○G. Yamahata1, S. Ryu2, H.-S. Sim2, N. Johnson1, M. Kataoka3, A. Fujiwara1(1.NTT Basic Res. Labs. (Japan), 2.KAIST (Korea), 3.National Physical Lab. (UK))
[A-7-04]Optical Control of the Silicon–Vacancy Center in Diamond
○M. Hanks1,2, W.J. Munro3,4,2, K. Nemoto2,1(1.Sokendai (The Graduate Univ. for Advanced Studies) (Japan), 2.National Inst. of Informatics (Japan), 3.NTT Basic Res. Labs. (Japan), 4.NTT Res. Center for Theoretical Quantum Physics (Japan))
[A-7-05]Hybridization: A tool to engineer and probe novel quantum metamaterials
○W. Munro1,2,4, A. Angerer3, S. Putz3, T. Astner3, J. Schmiedmayer3, J. Majer4,3, K. Nemoto4(1.NTT Basic Research Labs. (Japan), 2.Research Center for Theoretical Quantum Physics, NTT Corporation (Japan), 3.Vienna Center for Quantum Science and Technology, Atominstitut, TU Wien (Austria), 4.National Institute of Informatics (Japan))
[A-7-06]Qubit-resonator coupling system for quantum annealing
○A. Tomonaga1, H. Mukai1, Y. Zhou2, R. Wang1, Y. Nakajima1, J.S. Tsai1,2(1.Dept. of Phys., Tokyo Univ. of Sci. (Japan), 2.CEMS, RIKEN (Japan))
[A-8-01]Enhancement of Spin-orbit Torque by CoOx Layer Insertion into Co/Pt Interface
○K. Hasegawa1, Y. Hibino1, M. Suzuki2, T. Koyama1, D. Chiba1(1.Univ. of Tokyo (Japan), 2.JASRI (Japan))
[A-8-02]Observation of Spin-orbit torque generated by interface-generated spin current in a Py/Pt/Co system
○Y. Hibino1, T. Koyama1, D. Chiba1(1.Univ. of Tokyo (Japan))
[A-8-03]Enhancement of spin orbit interaction in nitrogen doped Cu thin films
○R. Enoki1, H. Gamou1, S. Karube1,2, M. Kohda1,2, Y. Kunihashi3, H. Sanada3, J. Nitta1,2(1.Tohoku Univ. (Japan), 2.CSRN Tohoku Univ. (Japan), 3.NTT-BRL (Japan))
[A-8-04]Observation of Spin-Orbit Torque Induced Magnetization Switching in Gd-Fe Perpendicular Magnetized Wire with In-Plane Exchange Bias Field
○M. Wakae1, Y. Kurokawa1, H. Yuasa1(1.Kyushu Univ. (Japan))
[A-8-05]Giant field-like torque observed in a Py/W/Pt trilayer system
○S. Karube1,2, N. Tezuka1, M. Kohda1,2, M. Matsuura1, S. Sugimoto1, J. Nitta1,2(1.DepaNational Institute of Informatics, Tohoku Univ. (Japan), 2.Center for Spintronics Research Network, Tohoku Univ. (Japan))
[A-8-06]Angle dependent spin-orbit interaction in a physically defined silicon double quan-tum dot
○M. Marx1,2, J. Yoneda2, T. Otsuka2, K. Takeda2, Y. Yamaoka3, T. Nakajima2, S. Li2, A. Noiri2, T. Kodera3, S. Tarucha1,2(1.Univ. of Tokyo (Japan), 2.RIKEN (Japan), 3.Tokyo Tech (Japan))
[A-8-07]Rashba-Edelstein effect in epitaxial Pt/Co bilayers grown on Al2O3(0001) substrates
○Y. Du1, S. Karube1, H. Gamou1, J. Ryu1, S. Takahashi1, M. Kohda1, J. Nitta1(1.Tohoku Univ. (Japan))
[A-8-08]Dynamics of Locally Injected Spin Distribution in Undoped GaAs Quantum Wells
○H. Sanada1, Y. Kunihashi1, Y. Tanaka1, A.M. Stramma1, H. Gotoh1, K. Onomitsu1, M. Kohda2, J. Nitta2, T. Sogawa1(1.NTT Basic Research Labs (Japan), 2.Tohoku Univ. (Japan))
[B-1-01 (Invited)]Highly reliable ReRAM for embedded memory and beyond applications
○S. Yoneda1, S. Ito1, Y. Hayakawa1, Z. Wei1, S. Muraoka1, K. Homma1, R. Yasuhara1, K. Kawashima1, A. Himeno1, R. Mochida1, H. Kotani1, K. Kouno1, T. Mikawa1, Y. Gohou1, T. Kakiage1(1.Panasonic Semiconductor Solutions Co., Ltd. (Japan))
[B-1-02]Superior Multilevel Resistive Switching Behaviors of N2-Plasma-Treated Stacked SiNx/GdOx RRAMs
○Y.T. Chan1, Y. Fu1, T.M. Chu1, J.C. Wang1,2,3(1.Chang Gung Univ. (Taiwan), 2.Chang Gung Memorial Hospital (Taiwan), 3.Ming Chi Univ. of Tech. (Taiwan))
[B-1-03]Study on Interfacial Redox Reactions of Tantalum as a Good Scavenger Material in ReRAM Devices
○A. Tsurumaki-Fukuchi1, M. Arita1, Y. Takahashi1(1.Hokkaido Univ. (Japan))
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