2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

Sep 9 - Sep 13, 2018University of Tokyo
International Conference on Solid State Devices and Materials
2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

Sep 9 - Sep 13, 2018University of Tokyo

[A-1-04]Nearly ideal spin tunneling efficiency by lowering the trap density at an amorphous-MgO / n+-Si(001) interface with a SiO x insertion layer

M. Ichihara1, S. Sato1, M. Tanaka1, R. Nakane1(1.Univ. of Tokyo (Japan))
https://doi.org/10.7567/SSDM.2018.A-1-04