International Conference on Solid State Devices and Materials
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2018 International Conference on Solid State Devices and Materials
Sep 9
- Sep 13, 2018
University of Tokyo
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2018 International Conference on Solid State Devices and Materials
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2018 International Conference on Solid State Devices and Materials
Sep 9
- Sep 13, 2018
University of Tokyo
[A-1-04]
Nearly ideal spin tunneling efficiency by lowering the trap density at an amorphous-MgO /
n
+
-Si(001) interface with a SiO
x
insertion layer
○
M. Ichihara
1
, S. Sato
1
, M. Tanaka
1
, R. Nakane
1
(1.Univ. of Tokyo (Japan))
https://doi.org/10.7567/SSDM.2018.A-1-04
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