2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

Sep 9 - Sep 13, 2018University of Tokyo
Back
International Conference on Solid State Devices and Materials
2018 International Conference on Solid State Devices and Materials

2018 International Conference on Solid State Devices and Materials

Sep 9 - Sep 13, 2018University of Tokyo

[A-3-05]Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si

○H. Tonegawa1, Y. Kumagai1, S. Fukuyama1, K. Hirose1, M. Watanabe1(1.Tokyo Tech (Japan))
https://doi.org/10.7567/SSDM.2018.A-3-05
Download PDFDownload PDF
Back