2021 International Conference on Solid State Devices and Materials

2021 International Conference on Solid State Devices and Materials

Sep 6 - Sep 9, 2021
International Conference on Solid State Devices and Materials
2021 International Conference on Solid State Devices and Materials

2021 International Conference on Solid State Devices and Materials

Sep 6 - Sep 9, 2021

[A-1-05] Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al2O3/Y2O3 as gate dielectrics

〇Lawrence Boyu Young1, Jun Liu1, Yen-Hsun Glen Lin1, Hsien-Wen Wan1, Jueinai Kwo2, Minghwei Hong1(1.National Taiwan Univ., 2.National Tsing Hua Univ.)
https://doi.org/10.7567/SSDM.2021.A-1-05