[A-4-06]Electron Mobility Enhancement in n-GeSn Epitaxial Layers by Tensile Strain
〇Kai-Ying Tien1, Chia-You Liu1, Po-Yuan Chiu1, Yen Chuang1, Hsiang-Shun Kao1, Jiun-Yun Li1,2,3(1.Graduate Inst. of Electronics Eng., National Taiwan Univ., 2.Department of Electrical Eng., National Taiwan Univ., 3.Taiwan Semiconductor Res. Inst.)
