[A-7-05]Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment
〇Tsung-En Lee1, Shao-Tse Huang2, Chiung-Yi Yang2, Kasidit Toprasertpong1, Mitsuru Takenaka1, Yao-Jen Lee2, Shinichi Takagi1(1.Univ. of Tokyo, 2.Taiwan Semiconductor Res. Inst.)
