International Conference on Solid State Devices and Materials

In this work, the linear and nonlinear optical properties of innovative GeSe(1−x)Te(x) thin films in amorphous state as well as after crystallization are studied. These alloys obtained by industrial magnetron co-sputtering of GeSe and GeTe targets belong to the GeSe-GeTe pseudo-binary line lying between the covalent GeSe compound and the “metavalently” bonded GeTe phase-change material. They are considered as very promising candidates for high temperature non-volatile resistive memory and photonic applications. In fact, they exhibit fast and reversible phase transformations between amorphous and crystalline states with unprecedented large contrast of electronic and optical properties, a very high thermal stability of the amorphous compared to other PCMs and a high transparency in the NIR-MIR range in both states. By modifying the Te content of the thin films, one can tailor their linear and non-linear optical properties for a wide range of innovative optical and photonic applications.