[OP-01]Opening Remarks
〇Shinichi Takagi1(1. General Chair, Organizing Committee)
2022 International Conference on Solid State Devices and Materials
Sep 26 - Dec 23, 2022Makuhari Messe
You can search for presentations in this event.
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2022 International Conference on Solid State Devices and Materials
Sep 26 - Dec 23, 2022Makuhari Messe
You can search for presentations in this event.
SearchSearch Results(409)
[OP-02]Opening Remarks
〇Toshiro Hiramoto1(1. President, The JapanSociety of Applied Physic)
[AW]Award Ceremony
[PL-01 (Plenary)]What's Next in Computing: When Classical & Quantum Computing Meet
〇Mukesh V. Khare1(1. IBM Research)
[PL-02 (Plenary)]Booming Architecture and Device Innovations for Intelligent Semiconductor Era
〇Ru Huang1(1. Peking University)
[PL-03 (Plenary)]GaN-on-Si technology for mm-wave wireless communication
〇Nadine Collaert1(1. imec)
[PL-04 (Plenary)]The Wave of Decarbonized Management Coming to the Semiconductor Industry
〇Michitaka Tokeiji1(1. Zeroboard Inc.)
[A-2-01 (Invited)]Integrated active lithium niobate photonic devices
Zhiwei Fang2, Haisu Zhang2, Jintian Lin1, 〇Ya Cheng1,2(1. Shanghai Inst. of Optics and Fine Mechanics (China), 2. East China Normal Univ. (China))
[A-2-02]Current injection and luminescence properties of wurtzite InP nanowires with crystal phase transition
〇Yuki Azuma1, Shun Kimura1, Hironori Gamo1, Junichi Motohisa1, Katsuhiro Tomioka1(1. Hokkaido University (Japan))
[A-2-03]Analysis of III-V MOS optical modulator with transparent doped graphene gate electrode
〇Tipat - Piyapatarakul1, Hanzhi Tang1, Kasidit Toprasertpong1, Shinichi Takagi1, Mitsuru Takenaka1(1. Univ. of Tokyo (Japan))
[A-2-04]Controllability of Luminescence Wavelength from GeSn Wires Fabricated by Laser Zone Melting on Quartz Substrates
〇Takayoshi Shimura1, Ryoga Yamaguchi1, Naoto Tabuchi1, Masato Kondo1, Mizuki Kuniyoshi2, Takuji Hosoi3, Takuma Kobayashi1, Heiji Watanabe1(1. Osaka Univ. (Japan), 2. ULVAC-Osaka Univ. Joint Res. Lab. for Future Tech. (Japan), 3. Kwansei Gakuin Univ. (Japan))
[A-2-05]Optical Properties of Innovative GeSe1-xTex Phase-Change Material Thin Films for On-Chip Active Components, Non-Linear and Neuromorphic Applications
〇Anthony Albanese1, Martina Tomelleri1, Jean-Baptiste Dory1, Christophe Licitra1, Benoît Charbonnier1, Jean-Baptiste Jager2, Aurélien Coillet3, Benoît Cluzel3, Pierre Noé1(1. Univ. Grenoble-Alpes, CEA-LETI (France), 2. Univ. Grenoble-Alpes, CEA-IRIG (France), 3. Univ. Bourgogne, ICB, UMR 6303 CNRS (France))
[A-5-01]Ultra-Low Voltage Fin-Shaped AlGaN/GaN Ultraviolet Photodetector with Enhanced Frequency Responses
〇Yuhan Pu1, Yung C. Liang1(1. National Univ. of Singapore (Singapore))
[A-5-02]Study on the Optical Characteristics of Light-Emitting HEMT with Different Quantum Well Locations
〇Yao-Luen Shen1, Chih-Yao Chang1, Po-Liang Chen1, Cheng-Chan Tai1, Tian-Li Wu2, Yuh-Renn Wu3, Chih-Fang Huang1(1. National Tsing-Hua Univ. (Taiwan), 2. National Yang Ming Chiao Tung Univ. (Taiwan), 3. National Taiwan Univ. (Taiwan))
[A-5-03]Fabrication and optical characterization of GaN microdisk cavites undercut by laser-assisted photo-electrochemical etching
〇Sho Sosumi1, Kenshin Shimoyoshi1, Kazuo Uchida1, Takeyoshi Tajiri1(1. The University of Electro-Communications (Japan))
[A-5-05]Significant Improvement of Injection Efficiency in Deep-UV LD Structures by Light Mg Doping in p-Core Layer
〇Yuri Itokazu1,2, Noritoshi Maeda1, Hiroyuki Yaguchi2, Hideki Hirayama1(1. RIKEN (Japan), 2. Saitama Univ. (Japan))
[A-6-01]1060nm Single-mode Bottom Emitting VCSEL Array with Intra-cavity Metal-aperture for Multi-core Fiber Co-packaged Optics Transceivers
〇Liang Dong1, Xiaodong Gu2,1, Fumio Koyama1(1. Tokyo Inst. of Tech. (Japan), 2. Ambition Photonics Inc. (Japan))
[A-6-02]All III-arsenide 1.6 μm-band InAs quantum dot lasers
on InP(001) with a low threshold current density
〇Jinkwan Kwoen1, Natalia Morais1, Wenbo Zhan1, Satoshi Iwamoto1,2, Yasuhiko Arakawa1(1. NanoQuine, Univ. of Tokyo (Japan), 2. RCAST, Univ. of Tokyo (Japan))
[A-6-03]25-Gb/s Uncooled direct-modulation Using 1270-nm InGaAlAs-Based MQWs DFB Laser
〇Hsiang-Chun Yen1, Te-Hua Liu1, Chee-Keong Yee1, Yun-Cheng Yang1, Hao-Tien Cheng1, Guei-Ting Hsu1, Tien-Tsorng Shih2, Chao-Hsin Wu1(1. Univ. of Taiwan (Taiwan), 2. Univ. Sci. Tech. Kaohsiung (Taiwan))
[A-6-04]Single-Mode High-Speed 850 nm VCSEL Operated at 50 Gb/s for Pre-emphasis NRZ-OOK after 100-m GI-SMF transmission
〇Kuo-Hsiung Chu1, Yen-Wei Yeh1, Chia-Wei Sun1, Hao-Chung Kuo1(1. National Yang Ming Chiao Tung Univ. (Taiwan))
[A-6-05]Room-temperature operation characteristics of a spin-polarized light-emitting diode using InAs quantum dots tunnel-coupled with GaNAs
〇Kohei Etou1, Satoshi Hiura1, Junichi Takayama1, Agus Subagyo1, Kazuhisa Sueoka1, Akihiro Murayama1(1. Faculty of Information Science and Technology, Hokkaido University (Japan))
[A-6-06]Optical-to-MMW/THz Carrier Frequency Down-Conversion by UTC-PD-Integrated HEMT: the Scaling Rule of Conversion Gain on UTC-PD Mesa Size
〇Dai Nakajima1, Kazuki Nishimura1, Tomotaka Hosotani1, Keisuke Kasai1, Masato Yoshida1, Tetsuya Suemitsu2, Taichi Otsuji1, Akira Satou1(1. Research Institute of Electrical Communication, Tohoku University (Japan), 2. New Industry Creation Hatchery Center, Tohoku University (Japan))
[A-6-08]Development of Epitaxial Regrowth for GaAs-Based Quantum Dot PCSELs
〇Adam F McKenzie1, Aye M. Kyaw1, Ben C. King1, Neil D. Gerrard1, Kenichi Nishi2, Keizo Takemasa2, Mitsuru Sugawara2, Calum H. Hill3, David T. D. Childs3, Richard J. E. Taylor3, Donald A. MacLaren1, Richard A. Hogg1(1. Univ. of Glasgow (UK), 2. QD Laser Inc. (Japan), 3. Vector Photonics Ltd. (UK))
[A-9-01]Photonic Band Imaging using Hyperspectral NIRFIS
〇Sho Okada1, Tomohiro Amemiya1,2, Hibiki Kagami1, Yahui Wang1, Nobuhiko Nishiyama1,2, Xiao Hu3(1. Tokyo Tech. (Japan), 2. IIR. (Japan), 3. WPI-MANA, NIMS (Japan))
[A-9-02]Development of Test Element Group Methodology for Time-of-Flight CMOS Image sensor
〇Jungwook Lim1, Seunghyun Lee1, Sungyoung Seo1(1. Samsung Electronics Co., Ltd. (Korea))
[A-9-03]Wide-range Si-based non-contact temperature sensor using single-photon avalanche diodes
〇Yao Lun Liu1, Sheng Di Lin1, Chun Hsien Liu1, Chun Hao Tsai1, Ce Fang Shih1, Jau Yang Wu1, Chia Ming Tsai1(1. Univ. of National Yang Ming Chiao Tung (Taiwan))
[A-9-04]Investigation of Au-InGaAs Alloy for Plasmonic InGaAs Waveguide Photodetector
〇Taketoshi Nakayama1, Kasidit Toprasertpong1, Shinichi Takagi1, Mitsuru Takenaka1(1. Univ. of Tokyo (Japan))
[A-9-05]Observation of Reversible Refractive Index Change of CMOS-Compatible Silicon Nitride Film
〇Yuriko Maegami1, Gangwei Cong1, Morifumi Ohno1, Toshihiro Narushima1, Noritsugu Yamamoto1, Hitoshi Kawashima1, Koji Yamada1(1. AIST (Japan))
[A-9-06]Novel Process Optimization for Higher SNR of Small Pixel Sized CMOS Image Sensor with FDTI Structure.
〇Hyungeun Yoo1, Junghyun Kim1, Taesung Lee1, Jonghoon Park1, Yunki Lee1, Bumsuk Kim1, Jungchak Ahn1(1. Samsung electronics Co., Ltd (Korea))
[A-9-07]Fabrication of 3 µm Pixel Pitch InGaAs Photodiodes using Be Implantation Doping for SWIR sensing
〇Jules Tillement1,2,3, Cyril Cervera2, Jacques Baylet2, Olivier Gravrand2, Quentin Lalauze2, Christophe Jany2, Thomas Di Rito2, Olivier Saxod2, Norbert Moussy2, Thierry Baron3, Francois Roy1, Frederic Boeuf1(1. STMicroelectronics (France), 2. Universite Grenoble Alpes, CEA Leti (France), 3. Universite Grenoble Alpes CNRS, LTM (France))
[A-10-01]Demonstration of an Efficient Light Coupler to a Valley Photonic Crystal Waveguide Formed at a Bearded Interface
〇Hironobu Yoshimi1,2, Takuto Yamaguchi1,2, Satomi Ishida1,2, Yasutomo Ota3,4, Satoshi Iwamoto1,2,4(1. RCAST, The Univ. of Tokyo (Japan), 2. IIS, The Univ. of Tokyo (Japan), 3. Keio Univ. (Japan), 4. NanoQuine, The Univ. of Tokyo (Japan))
[A-10-02]Optical Unitary Conversion of Multi-Wavelength Dual-Polarization Channels using Integrated Multi-Plane Light Converter
〇Ryota Tanomura1, Takuo Tanemura1, Yoshiaki Nakano1(1. Univ. of Tokyo (Japan))
[A-10-03]Polarization-Independent Enhancement of Optical Absorption in a GaAs Quantum Well Embedded in an Air-bridge Bull’s-eye Cavity
〇Sangmin Ji1, Takeyoshi Tajiri2, Xiao-Fei Liu3, Haruki Kiyama3,4, Akira Oiwa3, Julian Ritzmann5, Arne Ludwig5, Andreas Dirk Wieck5, Satoshi Iwamoto1(1. The Univ. of Tokyo (Japan), 2. Univ. of Electro-Communications (Japan), 3. Osaka Univ. (Japan), 4. Kyushu Univ. (Japan), 5. Ruhr-Universität Bochum (Germany))
[A-10-04]Compact, Low-loss, Fabrication-tolerant, and Thermally Stable 2x2 Si Optical Coupler Designed by CMA-ES
〇Yuto Miyatake1, Kasidit Toprasertpong1, Shinichi Takagi1, Mitsuru Takenaka1(1. Univ. of Tokyo (Japan))
[A-10-05 (Invited)]Analog Photonic Computing for Deep Neural Network Applications
〇Nikos Pleros1, George Giamougiannis1, Apostolos Tsakyridis1, Miltiadis Moralis-Pegios1(1. Aristotle Univ. of Thessaloniki (Greece))
[A-10-06]Experimental Demonstration of a Novel Self-adaptive Photonic Tensor Core on the SOI Platform with Noise Suppression towards High Precision and Computational Efficiency
〇Rui Shao1, Gong Zhang1, Xuanqi Chen1, Haibo Wang1, Yue Chen1, Yuxuan Wang1, Xiao Gong1(1. National Univ. of Singapore (Singapore))
[A-10-07]Modulation of C-band III-V/Si hybrid Lasers for FMCW LiDAR Applications
〇Josserand GAUDY1,2,3, Cédric Rostaing2, Christophe Jany2, Karim Hassan2, Frédéric Boeuf1, Jean-Emmanuel Broquin3(1. ST Microelectronics Crolles (France), 2. CEA-Leti, Univ. Grenoble Alpes (France), 3. Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, IMEP-LaHC (France))
[B-2-01 (Invited)]Metrology to Support Processing and Development of 4H-SiC CMOS and Power Devices at Fraunhofer IISB from Research to Multi Project Wafer Services
〇Mathias Rommel1, Tobias Erlbacher1(1. Fraunhofer Inst. for Integrated Systems and Device Tech. IISB (Germany))
[B-2-02 (Invited)]Morphology and Properties of Diamond Deposited on Grooved 4H-SiC Substrate
〇Kuan Yew Cheong1, Xiufei Hu2, Ming Li2, Yingnan Wang2, Yan Peng2, Gongbin Tang2, Mingsheng Xu2, Xiangang Xu2, Jisheng Han2, Xiwei Wang2, Bin Li2, Yiqiu Yang2(1. Universiti Sains Malaysia (Malaysia), 2. Shandong Univ. (China))
[B-2-03]Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond
〇Mayu Ueda1, Kyosuke Hayasaka1, Kyotaro Kanehisa1, Yasuhiro Takahashi1, Chiyuki Wakabayashi1, Taisuke Kageura2, Hiroshi Kawarada1,3(1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))
[B-2-04]Importance of dissolving source precursor of Ga(C5H7O2)3 with HCl in mist CVD for α-Ga2O3 growth
〇Rie Yamada1, Atsushi Sekiguchi1, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1(1. Univ. of Kogakuin (Japan))
[B-2-05]First-Principles Study for Self-limiting Growth of GaN Layers on AlN(0001) Surface
〇Haruka Sokudo1, Toru Akiyama1, Tomonori Ito1(1. Univ. of Mie (Japan))
[B-3-01 (Invited)]Heteroepitaxy of Group IV Materials for Future Device Application
〇Yuji Yamamoto1, Wei-Chen Wen1, Bernd Tillack1,2(1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))
[B-3-02]Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe
〇Wei-Chen Wen1, Bernd Tillack1,2, Yuji Yamamoto1(1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))
[B-3-03]Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge
〇Koki Nozawa1, Takeshi Nishida1, Takashi Suemasu1, Kaoru Toko1(1. Univ. of Tsukuba (Japan))
[B-3-04]GeSn nanodots crystal nuclei for solid phase crystallization of poly-SiGeSn
〇Yusei Shirai1, Hirokazu Tatsuoka1, Yosuke Shimura1,2,3(1. Univ. of Shizuoka (Japan), 2. RIE Shizuoka Univ. (Japan), 3. imec (Belgium))
[B-3-05]Molecular beam epitaxy of Si1−xSnx layers with 10%-Sn content on Si1−yGey buffers
〇Kazuaki Fujimoto1(1. Nagoya Univ. (Japan))
[B-3-06]Study on doping by ion implantation to Si1−xSnx epitaxial layers
〇Tatsuki Oiwa1, Shigehisa Shibayama1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2(1. Nagoya Univ. (Japan), 2. IMaSS, Nagoya Univ. (Japan))
[B-5-01]Fabrication and optical characterization of InGaN/GaN MQW fine nanopillar arrays by low-damage HEATE process
〇Takeki Aikawa1, Akihiko Kikuchi1,2,3(1. Sophia Univ. (Japan), 2. Sophia Photonics Research Center (Japan), 3. Sophia Semiconductor Research Institute (Japan))
[B-5-02]Heteroepitaxial Chemical Bath Deposition of Ultra-High Density ZnO Nanorod Arrays on Au thin-films: Impacts of Au thin-film crystallinity and Periodic Template
〇Sho Mekata1, Yuki Murata1, Kentaro Watanabe2(1. Shinshu Univ. (Japan), 2. IFES, ICCER, Shinshu Univ. (Japan))
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