International Conference on Solid State Devices and Materials

This paper presents an ultra-low voltage AlGaN/GaN ultraviolet (UV) photodetector with trench-fin-shaped structural design. Owing to the intrinsic polarization field and fin-shaped field plates, the collection of photo-carriers is effective at a bias voltage as low as 200 mV, with the 365-nm photocurrent to dark current ratio above 10^5 and the peak UV responsivity around 10^3 measured. The enhanced frequency response was also observed up to 1 kHz on 365-nm UV switching. The proposed fin-shaped UV photodetector is very suitable for future ultra-low voltage III-V integrated circuits.