2022 International Conference on Solid State Devices and Materials
Sep 26 - Dec 23, 2022Makuhari Messe
2022 International Conference on Solid State Devices and Materials
Sep 26 - Dec 23, 2022Makuhari Messe
[A-5-03]Fabrication and optical characterization of GaN microdisk cavites undercut by laser-assisted photo-electrochemical etching
〇Sho Sosumi1, Kenshin Shimoyoshi1, Kazuo Uchida1, Takeyoshi Tajiri1(1. The University of Electro-Communications (Japan))
Presentation style: On-site (in-person)
GaN micro-disk cavities undercut by laser-assisted
photo-electrochemical (PEC) etching are fabricated and
optically characterized. The PEC etching uses a laser
source which is tuned to be absorbed by the InGaN/GaN
superlattice under the GaN disk for selective etching of
the superlattice. Resonant modes of the fabricated cavities
are confirmed by micro-photoluminescence spectroscopy
of light emission from the embedded quantum wells. Thequality factor reaches about 3900 at blue-violet wavelengths. Such high quality factor at this wavelength range
highlights the applicability of laser-assisted PEC etching
to fabrication of air-clad GaN micro-cavities.
photo-electrochemical (PEC) etching are fabricated and
optically characterized. The PEC etching uses a laser
source which is tuned to be absorbed by the InGaN/GaN
superlattice under the GaN disk for selective etching of
the superlattice. Resonant modes of the fabricated cavities
are confirmed by micro-photoluminescence spectroscopy
of light emission from the embedded quantum wells. Thequality factor reaches about 3900 at blue-violet wavelengths. Such high quality factor at this wavelength range
highlights the applicability of laser-assisted PEC etching
to fabrication of air-clad GaN micro-cavities.