[A-9-05]Observation of Reversible Refractive Index Change of CMOS-Compatible Silicon Nitride Film
〇Yuriko Maegami1, Gangwei Cong1, Morifumi Ohno1, Toshihiro Narushima1, Noritsugu Yamamoto1, Hitoshi Kawashima1, Koji Yamada1(1. AIST (Japan))
Presentation style: On-site (in-person)
We report a reversible refractive index change of a silicon nitride film deposited by plasma-enhanced chemical vapor deposition. The reversible change was observed in alternately processing of annealing and ultraviolet irradiation. The reversible index change has a potential to be applicable to non-volatile photon-ic interference circuits.
