2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

Sep 26 - Dec 23, 2022Makuhari Messe
International Conference on Solid State Devices and Materials
2022 International Conference on Solid State Devices and Materials

2022 International Conference on Solid State Devices and Materials

Sep 26 - Dec 23, 2022Makuhari Messe

[B-2-03]Characterization of Ultra High-Concentration Nitrogen-doped CVD Diamond

〇Mayu Ueda1, Kyosuke Hayasaka1, Kyotaro Kanehisa1, Yasuhiro Takahashi1, Chiyuki Wakabayashi1, Taisuke Kageura2, Hiroshi Kawarada1,3(1. Waseda Univ. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (Japan), 3. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))
https://doi.org/10.7567/SSDM.2022.B-2-03
Presentation style: Online
The highest nitrogen-doped CVD diamond ([N] = 8×10^(20) [cm-3]) was prepared by adding the same amount of CO2 as CH4. These thin films were evaluated by X-ray diffractometer (XRD) - including a reciprocal space mapping (RSM) measurement, Raman spectroscopy, and cross-sectional TEM images. From the physical properties, it was found that under optimum gas mixture (CH4: 2.0 [%], CO2: 2.0 [%], N2: 8.0 [%], H2: 88.0 [%]), high quality crystal was obtained de-spite the highest nitrogen content.