2022 International Conference on Solid State Devices and Materials
Sep 26 - Dec 23, 2022Makuhari Messe
2022 International Conference on Solid State Devices and Materials
Sep 26 - Dec 23, 2022Makuhari Messe
[B-3-02]Vertical Alignment Control of Self-Ordered Multilayered Ge Nanodots on SiGe
〇Wei-Chen Wen1, Bernd Tillack1,2, Yuji Yamamoto1(1. IHP - Leibniz Inst. for High Performance Microelectronics (Germany), 2. Technische Universität Berlin (Germany))
Presentation style: On-site (in-person)
Mechanism of self-ordering of Ge nanodots in SiGe was investigated by fabricating multilayer Ge nano-dots with SiGe spacers on Si0.4Ge0.6 virtual substrate. By depositing the SiGe at 550 °C or raising Ge content, the SiGe surface is smooth, resulting in vertical-ly-aligned Ge nanodots to reduce strain energy. By depositing at 500 °C and lowering Ge content, check-erboard-like surface forms and the following Ge nan-odots grow at staggered position to reduce surface energy.