[B-3-03]Impact of N-type Impurities on Solid-phase Crystallization of Amorphous Ge
〇Koki Nozawa1, Takeshi Nishida1, Takashi Suemasu1, Kaoru Toko1(1. Univ. of Tsukuba (Japan))
Presentation style: Online
Among n-type impurities, P doping in amorphous Ge significantly promoted the lateral growth during solid-phase crystallization, resulting in large grains. The electron mobility was the highest among n-type polycrystalline Ge directly grown on insulators at low temperatures.
