International Conference on Solid State Devices and Materials

Position-controlled high-aspect ultrafine InGaN/GaN nanopillar arrays ranging from 9 to 1000 nm in diameter and 300 nm in height have been fabri-cated via hydrogen environment anisotropic thermal etching (HEATE) method, which utilizes a SiO2 etching mask and hydrogen-assisted thermal decomposition of GaN. The blue photoluminescence emission was ob-tained at room temperature even from 9 nm diameter ultrafine nanopillars, and the optical properties of InGaN quantum wells were systematically character-ized over a wide range of two orders of magnitude.