2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
[A-1-02]Growth and Characterization of SnS Ferroelectric Phase for BPVE Measurement
○Ryo Nanae1, Satsuki Kitamura1, Yih-Ren Chang1,2, Tomonori Nishimura1, Keisuke Shinokita3, Kazunari Matsuda3, Kosuke Nagashio1(1. the Univ. of Tokyo (Japan), 2. RIKEN (Japan), 3. Kyoto Univ. (Japan))
In this research, large and ferroelectric SnS crystals were grown on van der Waals HOPG substrates for bulk photovoltaic effect (BPVE) measurements. These crystals were characterized by HAADF-STEM, SHG and Raman spectroscopy, so the ferroelectric phase of SnS was uniquely identified as β’-phase. Furthermore, thermal stability of β’- SnS on HOPG suggests that the curie temperature of β’-SnS is between 473 K and 573 K, which is higher than that estimated by the theoretical calculation. The present large β’-SnS crystals with noncentrosymmetry can be suitably used for BPVE measurement.