[OP-01]Welcome Address
○Seiichi Miyazaki1(1. General Chair, Organizing Committee)
2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
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2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
You can search for presentations in this event.
SearchSearch Results(612)
[OP-02]Welcome Address
○Toshiro Hiramoto1(1. President, The Japan Society of Applied Physics)
[AW]SSDM Award/SSDM Paper Award Ceremony
[PL-01 (Plenary)]Unique physics and applications in III-nitride semiconductors and heterostructures
○Huili Grace Xing1(1. Cornell Univ. (USA))
[PL-02 (Plenary)]Challenges in Advanced Semiconductor Industry: Technology, Design and Talents
○Meng-Fan (Marvin) Chang1(1. Taiwan Semiconductor Manufacturing Company, Ltd. (Taiwan))
[PL-03 (Plenary)]Limitless Quest - Exploring true prosperity of human beings through semiconductor technology and manufacturing innovation
○Atsuyoshi Koike1(1. Rapidus Corp. (Japan))
[PL-04 (Plenary)]From a Grain of Sand to a 〈Quantum〉 Bit of Information
○James S. Clarke1(1. Intel Corp. (USA))
[A-1-01 (Invited)]Synthesis and Electronic Applications of Wafer-Scale 2.5D Materials
○Hiroki Ago1(1. Kyushu Univ. (Japan))
[A-1-02]Growth and Characterization of SnS Ferroelectric Phase for BPVE Measurement
○Ryo Nanae1, Satsuki Kitamura1, Yih-Ren Chang1,2, Tomonori Nishimura1, Keisuke Shinokita3, Kazunari Matsuda3, Kosuke Nagashio1(1. the Univ. of Tokyo (Japan), 2. RIKEN (Japan), 3. Kyoto Univ. (Japan))
[A-1-03]In-plane polarization domain of ferroelectric SnS thin film by PFM measurement
○Satsuki Kitamura1, Ryo Nanae1, Yih Ren Chang1,2, Tomonori Nishimura1, Kosuke Nagashio1(1. The Univ. of Tokyo (Japan), 2. RIKEN (Japan))
[A-1-04]Polarization-controlled single-photon emitter combining a colloidal quantum dot and an elliptical split-ring metamaterial element
○Issei Pribyl1, Taiki Nakagawa1, Kyosuke Uchiyama1, Kohki Mukai1(1. Yokohama National Univ. (Japan))
[A-2-01]Er 2O 3 top gate MoS 2 FET with EOT lower than 1 nm
○Shuhong Li1, Tomonori Nishimura1, Kosuke Nagashio1(1. Univ. of Tokyo (Japan))
[A-2-02]Thermal-aware Design of Metal Nanosheet Sensors for Low-energy, Highly Sensitive Hydrogen Sulfide Nanoscale Sensors
○Taro Kato1, Takahisa Tanaka2, Ken Uchida1(1. Univ. of Tokyo (Japan), 2. Keio Univ. (Japan))
[A-2-03]Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs
○Ryosuke Kajikawa1, Takamasa Kawanago1, Iriya Muneta1, Takuya Hoshii1, Kuniyuki Kakushima1, Kazuo Tsutsui1, Hitoshi Wakabayashi1(1. Tokyo Institute of Technology (Japan))
[A-2-04]High-Frequency Semiconductor-Graphene-Semiconductor Transistors Using Epitaxial Graphene
Chi Liu1,2, ○Xiaoyue Wang1,2, Haiyan Jiang1,2, Xuqi Yang1,2, Zhongying Xue3, Zengfeng Di3, Dongming Sun1,2(1. Inst. of Metal Res., Chinese Academy of Sci. (China), 2. Univ. of Sci. and Tech. of China (China), 3. Shanghai Inst. of Microsystem and Info. Tech., Chinese Academy of Sci. (China))
[A-2-05]High-performance CMOS inverter based on MoTe 2-FETs achieved by contact doping and channel encapsulation
○Tianshun Xie1, Mengnan Ke2, Nobuyuki Aoki3(1. Chiba Univ. (Japan), 2. Chiba Univ. (Japan), 3. Chiba Univ. (Japan))
[A-2-06 (Late News)]Multilevel Storage Enabled by Light Erasable GNDs Floating Gate Transistor with MoS 2 Channel
○Han Hsiang Tai1, Yu Yuan Su1, Jer Chyi Wang1,2,3, Wen Hao Chang4,5, Chao Sung Lai1,6,7(1. Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 2. Department of Neurosurgery, Chang Gung Memorial Hospital (Taiwan), 3. Department of Electronic Engineering, Ming Chi Univ. of Tech. (Taiwan), 4. Research Center for Applied Sciences, Academia Sinica (Taiwan), 5. Department of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 6.Department of Nephrology, Chang Gung Memorial Hospital (Taiwan), 7.Department of Materials Engineering, Ming Chi Univ. of Tech. (Taiwan))
[A-3-01 (Invited)]Core-shell Nanowire LEDs Enabled by Polarity-Controlled Growth of Gallium Nitride Nanowire Arrays on Silicon
○Matt Brubaker1, Alexana Roshko1, Todd Harvey1, Kris Bertness1(1. National Inst. of Standards and Tech. (United States of America))
[A-3-02]Ultra-High Packing Density Vertical GaN Nanocolumn SBDs using Bottom-Up Growth Approach
○Hiroyuki Shimada1, Hironobu Kariyazono1, Yohei Nakagawa1, Shinji Terao1, Kentaro Takayanagi1, Koichiro Akasaka1, Shunsuke Ishizawa1, Koichi Morozumi2, Rie Togashi3, Katsumi Kishino3(1. Core Tech. Development Dept., Seiko Epson Corp. (Japan), 2. Material Analysis & CAE Center, Seiko Epson Corp. (Japan), 3. Sophia Nanotech. Res. Center, Sophia Univ. (Japan))
[A-3-03]Evaluation of Si and Ge Segregation from Si 0.2Ge 0.8(111) through Al and Ag Layer
○Taiki Sakai1, Akio Ohta2, Noriyuki Taoka3, Junji Yuhara1, Katsunori Makihara1, Yuji Yamamoto4, Wei-chen Wen4, Seiichi Miyazaki1(1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan), 4. IHP (Germany))
[A-4-01]From h-BN to graphene: comprehensive structural characterizations of hybrid carbon-doped h-BN to understand its electrical conductivity
○Supawan Ngamprapawat1, Jimpei Kawase1, Tomonori Nishimura1, Kenji Watanabe2, Takashi Taniguchi2, Kosuke Nagashio1(1. Univ. of Tokyo (Japan), 2. NIMS (Japan))
[A-4-02]Characterization of Nanowire Light-Emitting Diodes with InP/InAsP Heterostructures Emitting in Telecom Band
Manami Okamoto1, Tomoya Akamatsu1, Katsuhiro Tomioka1, ○Junichi Motohisa1(1. Hokkaido Univ. (Japan))
[A-4-03]Strong Gate Modulation Effect in Nanoscale TiN Channels
○Yu- An Lai1, Chin-Te Wang1, Yu-An Chou1, Shun-Tsung Lo1, Thi Hien Do1, Sheng-Di Lin1(1. National Yang Ming Chiao Tung University (Taiwan))
[A-4-04]Thermal Desorption Study of PCz-sorted SWCNTs for Electronic Hourglass Device
○Yang Xu1, Jiayi Wang1, Nannan You1, Hong Dong3, Weihua Wang3, Xuelei Liang4, Shengkai Wang1,2(1. Inst. of Microelectronics of Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. Department of Electronic Sci. and Eng. and Tianjin Key Lab. of Photo-Electronic Thin Film Device and Tech., Nankai Univ. (China), 4. Key Lab. for the Physics and Chemistry of New Device, Peking Univ. (China))
[A-6-01 (Invited)]Efficient Electron Spin Orientation and Nonlinear Spin Response in a Room-Temperature All-Semiconductor Spin Amplifier
○Yuqing Huang1,2, Irina A. Buyanova1, Weimin M. Chen1(1. Linköping Univ. (Sweden), 2. Inst. of Semiconductors, Chinese Academy of Sciences (China))
[A-6-02]First Demonstration of Bi-directional Sub-50 mV/dec MoS 2-Hf 0.5Zr 0.5O 2 Ferroelectric FET with Record High Memory Window Efficiency Exceeding the Theoretical Limit and High-Precision Analog Synapse
○HENG XIANG1, Yu-Chieh Chien1, Lingqi Li1, Haofei Zheng1, Sifan Li1, Yufei Shi1, Kah-Wee Ang1,2(1. National Univ. of Singapore (Singapore), 2. Inst. of Materials Res. and Eng. (Singapore))
[A-6-03]Heterogeneous Integration of 32 × 32 1S1R Crossbar Array using 2D Hafnium Diselenide on Si Platform and its Compute-in-Memory Hardware Featuring Low Latency and High Energy Efficiency
○Samarth Jain1, Sifan Li1, Jianze Wang1, Xuanyao Fong1, Kah-Wee Ang1,2(1. National University of Singapore (Singapore), 2. Institute of Materials Research and Engineering, A*STAR (Singapore))
[A-6-04]Artificial Excitatory and Inhibitory Neuron Enabled by a Single Threshold-Switching Double-Gate MoS 2 Transistor
○Hanxi Li1, Jiayang Hu1, Anzhe Chen1, Yishu Zhang1, Yang Xu1, Bin Yu1(1. Zhejiang university (China))
[A-6-05 (Late News)]Ultra Flexible and Highly Integrated All Solid-State Artificial Synapse Arrays Based on van der Waals 2D/Solid Electrolyte Heterostructures for Wearable Edge Computing
○Yonghun Kim1(1. Korea Institute of Materials Science (Korea))
[A-7-01 (Invited)]Micro-area Ultrafast Spectroscopy and the Application
○Xinfeng Liu1(1. National Center for Nanoscience and Tech. (China))
[A-7-02]A Ballistic Transport Investigation of High Performance CNTFETs with Interface Engineering: Virtual Source Parameter Extraction and SPICE Circuit Analysis
○Yuchen Gu1, Mengyu Zhao2, Zhihan Liu2, Junru Qu1, Ying Sun1, Yinfan Ouyang2, Wei Sun2, Ran Cheng1(1. Univ. of Zhejiang (China), 2. Univ. of Peking (China))
[A-7-03]Stack control of Bi/Au bilayer electrodes toward p-type WSe 2 FET
○Ryuichi Nakajima1, Tomonori Nishimura1, Keiji Ueno2, Yasumitsu Miyata3, Kosuke Nagashio1(1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan), 3. Tokyo Metropolitan Univ. (Japan))
[A-7-04]Ultra-Steep-Slope P-Type Threshold Switch Field-Effect Transistors
○Jiayang Hu1, Hanxi Li1, Yishu Zhang1, Yang Xu1, Bin Yu1(1. Zhejiang Univ. (China))
[A-8-01]Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material
○Yoshifumi Morita1, Takuya Iwasaki2, Kenji Watanabe2, Takashi Taniguchi2(1. Gunma Univ. (Japan), 2. National Inst. for Material Sci. (Japan))
[A-8-02]Dual gating and manipulation of the quantum valley currents in hBN/bilayer-graphene superlattices
○Takuya Iwasaki1, Yoshifumi Morita2, Kenji Watanabe1, Takashi Taniguchi1(1. NIMS (Japan), 2. Gunma Univ. (Japan))
[A-8-03]Exploiting Transport Properties of Colloidal Quantum Dots Thin Films to Operate Multiple Photodiodes Matrices Simultaneously
○Loïc Baudoin1, Arthur Arnaud1, Sébastien Massenot2, Pierre Magnan2(1. STMicroelectronics (France), 2. ISAE SUPAERO Univ. of Toulouse (France))
[B-1-01 (Invited)]Si Platform for Implementing High-fidelity Quantum Gates and Quantum Error Correction
○Seigo Tarucha1(1. RIKEN (Japan))
[B-1-02]Cryogenic Inter-chip Connection for Silicon Qubit Devices
○Tokio Futaya1, Raisei Mizokuchi1, Misato Taguchi2, Takuji Miki2, Makoto Nagata2, Jun Yoneda1, Tetsuo Kodera1(1. Tokyo Tech. (Japan), 2. Kobe Univ. (Japan))
[B-1-03]Construction of an Environment Model for Auto-tuning Quantum Dot Devices Using Model-based Reinforcement Learning
○Chihiro Kondo1, Raisei Mizokuchi1, Jun Yoneda1, Tetsuo Kodera1(1. Tokyo Inst. of Tech. (Japan))
[B-1-04]Device and Technology Codesign of Germanium Quantum-Dots Qubits with Optimal Charge Stability
○Ting Tsai1, I-Hsiang Wang1, Chi-Cheng Lai1, David M.T. Kuo2, Pei-Wen Li1(1. National Yang Ming Chiao Tung University (Taiwan), 2. National Central University (Taiwan))
[B-1-05 (Invited)]Role of Si-ULSI Technology in Realizing Scalable Quantum Computer
○Ryuta Tsuchiya1(1. Hitachi, Ltd. (Japan))
[B-2-01 (Invited)]Cryogenic InGaAs HEMTs for LNA and routing circuits in Quantum Computing
○Sanghyeon Kim1, Jaeyong Jeong1, Seong Kwang Kim1, Yoon-Je Suh1, Jisung Lee2, Joonyoung Choi3, Juhyuk Park1, Joon Pyo Kim1, Bong Ho Kim1, Younjung Jo3, Dae-myeong Geum4, Seung-Young Park2, Jongmin Park5(1. KAIST (Korea), 2. KBSI (Korea), 3. KNU (Korea), 4. CBNU (Korea), 5. KANC (Korea))
[B-2-02]Electrical formation of electron-hole bilayer system in Si MOS transistors
○Masahiro Hori1, Jinya Kume1, Yukinori Ono1(1. Shizuoka Univ. (Japan))
[B-2-03]Aharonov-Bohm-type oscillations in selectively-grown polymorphic core/shell GaAs/InAs nanowires
○Farah Basaric1,4, Anton Faustmann1,4, Alexander Pawlis2,4, Patrick Zellekens3,5,6, Russel Deacon3,5, Benjamin Bennemann2,4, Detlev Grützmacher2,1,4, Koji Ishibashi3,5, Thomas Schäpers1,4(1. Peter Grünberg Inst. 9, Res. center Jülich (Germany), 2. Peter Grünberg Inst. 10, Res. center Jülich (Germany), 3. RIKEN Center for Emergent Matter Sci. (Japan), 4. JARA-Fundamentals of Future Info. Tech., Jülich-Aachen Res. Alliance, Research center Jülich and RWTH Aachen Univ. (Germany), 5. RIKEN Advanced Device Lab. (Japan), 6.Special Postdoctoral Res. Program (SPDR), RIKEN (Germany))
[B-2-04]Crosstalk Effect for Acousto-Electric Quantized Current
○Shunsuke Ota1,2, Junliang Wang3, Hermann Edlbauer3, Yuma Okazaki2, Shuji Nakamura2, Takehiko Oe2, Arne Ludwig4, Andreas D Wieck4, Tetsuo Kodera1, Christopher Bauerle3, Shintaro Takada2, Nobu-Hisa Kaneko2(1. Tokyo Tech (Japan), 2. AIST (Japan), 3. Inst. Neel (France), 4. Ruhr-Univ. Bochum (Germany))
[B-2-05]The high concentration NV ensembles formed from heavily nitrogen-doped CVD diamond with high quality
○Yudai Asano1, Kyosuke Hayasaka1, Mayu Ueda1, Kosuke Kimura2,3, Takashi Tanii1, Shinobu Onoda2, Shinpei Enomoto4, Hiroshi Kawarada1,4(1. Waseda Univ. (Japan), 2. National Inst. of Quantum and Radiological Sci. and Tech. (Japan), 3. Gunma Univ. (Japan), 4. Kagami Memorial Res. Inst. for Materials Sci. and Tech. (Japan))
[B-3-01]Canted Magnetic Field Assisted Spin Orbit Torque Switching in a Perpendicularly Magnetized Nano-magnet
○Tian Li1, Masahiro Koike1, Toshiya Murakami1, Shiho Murakami1, Nobuyuki Umetsu1, Hiroki Tokuhira1, Michael Quinsat1, Masatoshi Yoshikawa1(1. Kioxia Corp. (Japan))
[B-3-02]Atomistic Modelling of Spatially Resolved Oscillation Dynamics in Ferrimagnetic Spin-Chain
○Baofang Cai1, Xue Zhang2, Zhifeng Zhu2, Gengchiau Liang1(1. National Univ. of Singapore (Singapore), 2. ShanghaiTech Univ. (China))
[B-3-03]High Frequency Spin Torque Oscillation in Orthogonal Magnetization Disks with Strong Biquadratic Magnetic Coupling
○Chuhan Liu1, Yuichiro Kurokawa1, Naoki Hashimoto1, Terumitsu Tanaka1, Hiromi Yuasa1(1. Kyushu University (Japan))
[B-3-04 (Late News)]Ferromagnetic Semiconductor (Ga,Fe)Sb with Very High Curie Temperature (530 K) Grown on Vicinal GaAs(001) Substrates
○Kenta Takabayashi1, Masaaki Tanaka2,3, Pham Nam Hai1,3(1. Department of Electrical and Electronic Eng., Tokyo Inst. of Tech. (Japan), 2. Department of Electrical Engineering and Info. System, The Univ. of Tokyo, Tokyo 113-8656 (Japan), 3. Center for Spintronics Res. Network (CSRN), The Univ. of Tokyo, Tokyo 113-8656 (Japan))
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