2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
[A-2-05]High-performance CMOS inverter based on MoTe 2-FETs achieved by contact doping and channel encapsulation
○Tianshun Xie1, Mengnan Ke2, Nobuyuki Aoki3(1. Chiba Univ. (Japan), 2. Chiba Univ. (Japan), 3. Chiba Univ. (Japan))
High contact resistance limits the application of electrical devices based on 2D materials like transition metal dichalcogenide (TMDC). Here, a complementary metal–oxide–semiconductor (CMOS) inverter with high performance, which consists of an n and p-MoTe2 FET, was successfully fabricated by using contact doping and channel encapsulation methods. Contact doping is to reduce contact resistance which is achieved by laser irradiation. The channel of MoTe2-FET was encapsulated by h-BN to improve carrier mobility and device stability. The inverter shows a very high gain value of 32 at Vdd = 4 V at room temperature.