2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
[A-4-01]From h-BN to graphene: comprehensive structural characterizations of hybrid carbon-doped h-BN to understand its electrical conductivity
○Supawan Ngamprapawat1, Jimpei Kawase1, Tomonori Nishimura1, Kenji Watanabe2, Takashi Taniguchi2, Kosuke Nagashio1(1. Univ. of Tokyo (Japan), 2. NIMS (Japan))
Injecting carriers into single-crystal h-BN poses a challenge toward the development of h-BN-based high-power electronics and optoelectronics. Introducing C to create an h-BN/graphene hybrid material has been proposed as a potential method for ohmic current injection. This material resulted in ohmic conduction, which was initiated by the formation of a conductive path at high temperatures and voltages. Through comprehensive characterizations, C is the key component in this path. Our present results provide insight into the nature of this conductive path and the potential of hybrid material for future applications.