[A-4-02] Characterization of Nanowire Light-Emitting Diodes with InP/InAsP Heterostructures Emitting in Telecom Band | 2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center

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2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center

[A-4-02]Characterization of Nanowire Light-Emitting Diodes with InP/InAsP Heterostructures Emitting in Telecom Band

Manami Okamoto¹, Tomoya Akamatsu¹, Katsuhiro Tomioka¹, ^○Junichi Motohisa¹(1. Hokkaido Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-4-02

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We report on the characterization of the nanowire (NW) light-emitting diodes (NW-LEDs) emitting in telecom bands incorporating InP/InAsP heterostructure in the NW pn-junction. The NW showed sharp emission lines in the low-temperature photoluminescence (PL) spectra, suggesting the formation of quantum dots (QDs) in the NW. An NW-LED operation was demonstrated at both room and low temperatures. Furthermore, a sharp emission line was also observed under the current injection, which shows a possibility of our NW-LEDs as an on-demand single-photon source.

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