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Strong Gate Modulation Effect in Nanoscale TiN Channels

Huge modulation rate of TiN channel resistance has been achieved at room temperature. The nanowire channels are fabricated on ALD-prepared 3-nm-thick TiN film with e beam lithography and dry etching. By shrinking the channel width, a resistance modulation rate of up to 220.49% has been obtained with the back-gated nanowires. An anomalous non-linear I-V curve is observed and discussed.

International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

[A-4-03]Strong Gate Modulation Effect in Nanoscale TiN Channels