2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center
International Conference on Solid State Devices and Materials
2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center

[A-6-04]Artificial Excitatory and Inhibitory Neuron Enabled by a Single Threshold-Switching Double-Gate MoS 2 Transistor

Hanxi Li1, Jiayang Hu1, Anzhe Chen1, Yishu Zhang1, Yang Xu1, Bin Yu1(1. Zhejiang university (China))
https://doi.org/10.7567/SSDM.2023.A-6-04
Neuromorphic technology provides a promising platform for driving the next wave of artificial intelligence. An emerging research topic is performing advanced functions in an ultra-compact neuromorphic device. Here we report an artificial neuron based on a novel threshold-switching double-gate MoS2 transistor which can emulate the excitatory-inhibitory spatiotemporal integration neural functions. The neuron, featuring an ultra-compact physical configuration, provides a promising approach for constructing large-scale hierarchical neural network.