2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
[A-7-04]Ultra-Steep-Slope P-Type Threshold Switch Field-Effect Transistors
○Jiayang Hu1, Hanxi Li1, Yishu Zhang1, Yang Xu1, Bin Yu1(1. Zhejiang Univ. (China))
High energy efficiency is urgently required in the development of future integrated circuits. However, the continuous miniaturization of complementary metal–oxide-semiconductor (CMOS) devices is limited by the fundamental Boltzmann limit. Herein, the first p-type 2D-materials based threshold switch (TS) field effect transistor with ultra-steep slope is reported. Collective behavior is achieved by integrating the channel and the TS. The proposed device achieves an ultra-low SS (3.18 mV/dec) and a high on/off ratio of 106 with superior reliability. Significantly, the proposed device is expected to pave the way for the development of large-scale CMOS circuits based on energy efficient transistors.