2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center
International Conference on Solid State Devices and Materials
2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center

[A-8-01]Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material

Yoshifumi Morita1, Takuya Iwasaki2, Kenji Watanabe2, Takashi Taniguchi2(1. Gunma Univ. (Japan), 2. National Inst. for Material Sci. (Japan))
https://doi.org/10.7567/SSDM.2023.A-8-01
We shall discuss transport properties of dual-gatedhexagonal boron nitride (hBN)/bilayer-graphene (BLG) superlattices. A detailed study of the hBN/BLG superlattices should pave the way toward the “global phase diagram” with a variety of broken symmetries.