2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
2023 International Conference on Solid State Devices and Materials
Sep 5 - Oct 31, 2023Nagoya Congress Center
[B-1-04]Device and Technology Codesign of Germanium Quantum-Dots Qubits with Optimal Charge Stability
○Ting Tsai1, I-Hsiang Wang1, Chi-Cheng Lai1, David M.T. Kuo2, Pei-Wen Li1(1. National Yang Ming Chiao Tung University (Taiwan), 2. National Central University (Taiwan))
We investigated electronic structures and carrier transport properties through a single Ge quantum dot (QD) and double QDs (DQDs) devices using the effective-mass model in combination with the non-equilibrium Green's function technique. Effects of Ge QD diameters and coupling-barrier width/height of Si-containing layers on the Coulomb stability and charge stability diagrams of Ge single-hole transistors and DQDs, respectively, were numerically analyzed. Optimal structure design of Ge DQDs and SHTs for charge stability and sensing is proposed.