2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center
International Conference on Solid State Devices and Materials
2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5 - Oct 31, 2023Nagoya Congress Center

[B-2-01 (Invited)]Cryogenic InGaAs HEMTs for LNA and routing circuits in Quantum Computing

Sanghyeon Kim1, Jaeyong Jeong1, Seong Kwang Kim1, Yoon-Je Suh1, Jisung Lee2, Joonyoung Choi3, Juhyuk Park1, Joon Pyo Kim1, Bong Ho Kim1, Younjung Jo3, Dae-myeong Geum4, Seung-Young Park2, Jongmin Park5(1. KAIST (Korea), 2. KBSI (Korea), 3. KNU (Korea), 4. CBNU (Korea), 5. KANC (Korea))
https://doi.org/10.7567/SSDM.2023.B-2-01
Cryogenic RF transistors and routing circuits operat-ing with extremely low power are essential as control/readout electronics for future large-scale quantum computing systems. In this work, we demonstrate 3D stackable InGaAs HEMT-based cryogenic RF transistors and routing circuits integrated with Nb superconductors for ultra-low power operation.