2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[A-1-05]Transferring Compressive or Tensile Stress from Stressors to Si Layers: A Novel Approach
〇Pablo Acosta Alba1, Mayara Auricchio1, Patrice Gergaud1, Jean-Michel Hartmann1, Shay Reboh1(1. Univ. Grenoble ALpes, CEA-LETI (France))
In this work, we report on a novel method to induce mechanical stress into a silicon layer. We demonstrate the stress transfer from a stressor layer to a silicon layer underneath thanks to the temporal decoupling of the silicon/stressor bilayer from the substrate. To do this, we used the selective melting of a SiGe bottom layer using nanosecond laser annealing. High tensile stress values were obtained (2.1 GPa). Such an achievement is extremely promising for strain engineering as both tensile and compressive stress can theoretically be obtained.