International Conference on Solid State Devices and Materials

This paper presents a novel true random number generator (TRNG) utilizing V_TH variation in a single p-type transistor, distinguished by its notably low reading voltages. The TRNG demonstrates nearly ideal distributions of Inter-Hamming distance (Inter-HD) at 49.72% and Intra-HD at 50.02%, as well as approximately 50% Hamming weight, achieved through an enhanced security-processed scheme. Furthermore, our methodology has successfully undergone rigorous randomness testing by NIST at temperatures of 25℃, 45℃, and 65℃, validating its effectiveness in high-security environments.