International Conference on Solid State Devices and Materials

We report the development of curved complementary metal-oxide-semiconductor (CMOS) image sensors (CISs) by transferring a silicon-on-insulator (SOI) layer. The CIS, thinned to 11 μm, was transferred to a plastic substrate and attached to a cylindrical concave stage without incurring damage or peeling. The developed image sensors, with a resolution of 320 × 240, operated successfully in a curved configuration with a 25 mm radius. This process offers potential advancements in creating curved and flexible CISs, as well as other flexible CMOS devices including various sensors, logic circuits, displays, and memories.