International Conference on Solid State Devices and Materials

Feasibility of Te-based layered materials have been investigated on n-Ge as a S/D contact material. Bi₂Te₃/Ge quasi van der Waals contacts were found effective in suppressing strong Fermi-level pinning on n-Ge, resulting in a very small electron barrier height of < 0.1 eV. The Bi₂Te₃/n-Ge junction also shows very high thermal stability, featuring excellent ohmic behavior even after 400 °C annealing. Bi₂Te₃/Ge is a promising junction candidate for achieving low contact resistance Ge nFET.