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Gate-All-Around Vertical Channel Transistor Based on Self-Aligned in 2 Pitch Process for Future DRAM

The fabrication method and current-voltage characteristics of the self-aligned in 2-pitch cell array transistor (S2CAT) with gate all around (GAA) are presented. This device is fabricated using S2CAT with double gate (DG) and has an excellent gate controllability because the channel is surrounded by gate.

Advanced CMOS: Device Technology

International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

2024 International Conference on Solid State Devices and Materials

[A-4-06]Gate-All-Around Vertical Channel Transistor Based on Self-Aligned in 2 Pitch Process for Future DRAM