[A-4] Advanced CMOS: Device Technology

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[A-4-06] Gate-All-Around Vertical Channel Transistor Based on Self-Aligned in 2 Pitch Process for Future DRAM

〇Seunguk Han¹ (1. Samsung electronics Co., Ltd. (Korea))

DOI:

https://doi.org/10.7567/SSDM.2024.A-4-06

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