International Conference on Solid State Devices and Materials

Defect generation initiated by the electric field applied to Hf_0.5Zr_0.5O₂ (HZO) in the metal-ferroelectric-metal (MFM) capacitor was investigated through electrical measurement and analysis. In the initial electric field applied to the MFM capacitor, the number of defects generated depended on the strength of the electric field. In the same manner, the ferroelectricity of the HZO was emphasized following the increase in defects. Based on these results a model of ferroelectricity development in the initial application of electric field is proposed.