2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
2024 International Conference on Solid State Devices and Materials
Sep 1 - Sep 4, 2024Arcrea HIMEJI
[A-7-02]Comparative Analysis of Middle Dielectric Isolation (MDI) Integration Approaches in Monolithic Complementary Field Effect Transistors: ‘MDI-First vs MDI-Last’
〇Camila Toledo de Carvalho Cavalcante1, Steven Demuynck1, Alfonso Sepulveda Marquez1, Maria Chistiakova1, Subhobroto Choudhury1, Geert Mannaert1, Farid Sebaai1, Maryam Hosseini1, Anne Vandooren1, Pallavi Puttarame Gowda1, Emmanuel Dupuy1, BT Chan1, Hans Mertens1, Jef Geypen1, Sujith Subramanian1, Lucas Petersen Barbosa Lima1, Serge Biesemans1, Naoto Horiguchi1(1. imec, Leuven, Belgium (Belgium))
In this work, two integration schemes to form the MDI of monolithic CFET (mCFET) devices are compared. We report the main roadblocks with ‘MDI-Last’ approach in terms of consistently forming inner-spacer (ISP) and source-drain (SD) junctions. Therefore, ‘MDI-First’ is identified as the favored scheme for mCFET fabrication.